Semiconductor Optical Device Groove Design for Parasitic Capacitance Reduction
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Solution Overview
Problem
Existing semiconductor optical devices fail to sufficiently reduce parasitic capacitance and ensure effective state conversion of laser light due to inadequate groove configurations, leading to insufficient performance of integrated laser and optical functioning parts.
Innovation Solution
The semiconductor optical device incorporates a first groove dividing the active layer and a second groove with a higher inner wall surface height, connected to the first groove, to narrow the energization path and enhance the height of the optical functioning part, allowing for reliable state conversion of laser light and significant reduction of parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a pair of first grooves is provided to divide the active layer and narrow the energization range, then parasitic capacitance is reduced, but the energization path through the optical functioning part remains insufficiently narrowed
Solution Approach 1:
The invention divides the semiconductor layer into multiple regions using both first grooves (in the active layer) and second grooves (in the cladding layer). This segmentation creates distinct energization zones, effectively narrowing the current path through the optical functioning part and reducing parasitic capacitance more than single-layer grooves could achieve.
Solution Approach 2:
The invention applies different groove configurations to different layers: first grooves in the active layer and second grooves in the cladding layer. This local differentiation allows precise control of energization ranges in specific regions, particularly narrowing the path through the optical functioning part while maintaining laser emission quality.
2Ease of manufacture
If the height of the optical functioning part is reduced to accommodate groove formation, then manufacturing is simplified, but the state conversion function of laser light is insufficiently exhibited
Solution Approach 1:
The invention extends the groove structure into the vertical dimension by forming second grooves in the cladding layer that reach from the top surface down to connect with first grooves. This three-dimensional groove configuration allows sufficient state conversion function while maintaining manufacturability through controlled depth and connectivity.
Solution Approach 2:
The second grooves in the cladding layer are positioned to connect with and extend from the first grooves in the active layer, creating a nested groove structure. This nested configuration allows the optical functioning part to maintain adequate height for state conversion while the grooves penetrate through multiple layers to effectively narrow the energization path.
3Loss of energy
If grooves are formed to connect first and second grooves with different inner wall heights, then parasitic capacitance is significantly reduced, but the device structure becomes more complex
Solution Approach 1:
The invention segments the groove formation into two distinct stages: first grooves in the active layer and second grooves in the cladding layer. This segmentation allows each groove type to be optimized independently for its specific function, achieving significant parasitic capacitance reduction while managing structural complexity through systematic design.
Data Source
AI summary
A semiconductor optical device includes: a first conductive type semiconductor layer; an active layer; a second conductive type semiconductor layer including a ridge portion; a pair of first grooves, formed on bottom surfaces of both sides of the ridge portion and dividing the active layer; an optical functioning part including the first and second conductive type semiconductor layers, converting a state of light, and having a height higher than a height of the bottom surface of the ridge portion; and a second groove, at least a part thereof being formed on the optical functioning part, an end portion thereof being connected to the first groove, the second conductive type semiconductor layer being divided, and the maximum height of an inner wall surface thereof being higher than the maximum height of an inner wall surface of the first groove.