Semiconductor Overlay Correction Across DUV and EUV Exposure Tools
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Solution Overview
Problem
Overlay misalignment issues arise when using both Deep Ultraviolet (DUV) and Extreme Ultraviolet (EUV) devices due to differences in light sources, wafer stages, reticles, and optical systems, leading to challenges in aligning electronic components correctly.
Innovation Solution
A method for overlay correction involving measuring and correcting overlay parameters between patterns formed by DUV and EUV devices, using physical actuation to adjust the exposure apparatuses, including lens operations and reticle stage tilting, to synchronize the alignment of patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If both DUV and EUV devices are used to form multilayered patterns, then manufacturing capability and pattern complexity are improved, but overlay misalignment occurs due to differences in light sources, wafer stages, reticles, and optical systems
Solution Approach 1:
The patent changes the parameters of the exposure apparatuses by physically actuating components such as lens positions, reticle stage orientations, and wafer stage positions. By adjusting these physical parameters, the system compensates for the overlay misalignment caused by combining DUV and EUV devices, thereby maintaining manufacturing precision while preserving the ability to form complex multilayered patterns
Solution Approach 2:
The patent implements a feedback mechanism where overlay measurement data from the combined DUV and EUV patterning process is used to calculate correction values. These correction values are then applied to adjust the physical parameters of the exposure apparatuses, creating a closed-loop control system that continuously improves overlay alignment accuracy
2Manufacturing precision
If overlay parameters are corrected by physical actuation of exposure apparatuses, then overlay alignment accuracy is improved, but device complexity and correction process complexity increase
Solution Approach 1:
The patent performs preliminary actions by pre-calculating correction values based on measured overlay data and crosstalk relationships between parameters. The correction values for second overlay parameters are obtained in advance from the first overlay parameter corrections, allowing the physical actuation of exposure apparatuses to be based on pre-computed values rather than real-time calculations, thereby simplifying the control process
Solution Approach 2:
The patent introduces an intermediary computational layer that translates overlay measurement data into correction values for physical actuation. By using the crosstalk relationship between first and second overlay parameters as an intermediary model, the system converts complex multi-parameter correction problems into manageable sequential corrections, reducing the overall system complexity
Data Source
AI summary
A semiconductor manufacturing method with overlay correction includes measuring an overlay between a lower pattern and an upper pattern, wherein the lower pattern is formed using a first exposure apparatus and the upper pattern is formed using a second exposure apparatus operating with an exposure method that is different from an exposure method of the first exposure apparatus, correcting, among components of the overlay, a first overlay parameter by correcting a second overlay parameter that has a crosstalk relationship with the first overlay parameter, the second overlay parameter being corrected via physical actuation of the first exposure apparatus and the second exposure apparatus, and using the corrected first overlay parameter to manufacture a semiconductor device.