Semiconductor Package With High-Density Patch for Die Interconnects

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Solution Overview

Problem

Conventional semiconductor packaging methods face challenges in efficiently connecting high-density semiconductor dies while maintaining the routing density of low-density substrates, leading to increased costs and potential reliability issues.

Innovation Solution

A semiconductor device design featuring a low-density substrate with embedded low-density pillars and a high-density patch that allows high-density bumps to connect directly, bypassing the low-density substrate, and includes a manufacturing method to ensure electrical connections are reliable and cost-effective.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If high-density semiconductor dies are connected through low-density substrate routing, then electrical connections are established, but the routing density of the substrate increases leading to higher costs and potential reliability issues

Engineering Contradiction:
Improveelectrical connections reliabilityVSAvoidsubstrate routing density
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent transitions from two-dimensional routing through the substrate to three-dimensional direct bump-to-bump connections. High-density bumps on the semiconductor die connect directly to corresponding bumps on the package substrate without traversing through substrate routing layers, effectively adding a vertical dimension to the connection path and eliminating the need for complex lateral routing.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The invention extracts the high-density connection function from the low-density substrate routing system. By implementing dedicated high-density bump arrays that bypass the substrate's low-density routing structure, the patent separates the high-density interconnect function from the substrate's primary low-density routing function, allowing each to operate at its optimal density.

Inventive Principle:
Principle #2Taking out (Extraction)

2Ease of manufacture

If conventional packaging methods are used to connect high-density bumps, then manufacturing is simplified, but electrical connections reliability deteriorates

Engineering Contradiction:
Improvepackaging process simplicityVSAvoidelectrical connections reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent segments the connection system into two distinct pathways: low-density routing through the substrate for general connections, and high-density direct bump-to-bump connections for critical signal paths. This segmentation allows each pathway to be optimized independently, with the high-density pathway providing superior electrical connection reliability while the low-density pathway maintains manufacturing simplicity.

Inventive Principle:
Principle #1Segmentation

3Reliability

If substrate routing density is increased to accommodate high-density connections, then electrical connections are improved, but manufacturing costs increase

Engineering Contradiction:
Improveelectrical connections reliabilityVSAvoidpackaging cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent applies local quality by creating localized high-density bump arrays in specific regions of the semiconductor die and package substrate. Rather than uniformly increasing routing density across the entire substrate, the high-density connection structure is implemented only where needed for critical connections, maintaining cost-effectiveness while improving electrical connection reliability in specific areas.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20260076222A1Semiconductor device and manufacturing method thereof
Publication Date: 2026.03.12 AMKOR TECH SINGAPORE HLDG PTE LTD
  • US20260076222A1 patent drawing
  • US20260076222A1 patent drawing
  • US20260076222A1 patent drawing

AI summary

A semiconductor device includes a low-density substrate, a high-density patch positioned inside a cavity in the low-density substrate, a first semiconductor die, and a second semiconductor die. The first semiconductor dies includes high-density bumps and low-density bumps. The second semiconductor die includes high-density bumps and low-density bumps. The high-density bumps of the first semiconductor die and the high-density bumps of the second semiconductor die are electrically connected to the high-density patch. The low-density bumps of the first semiconductor die and the low-density bumps of the second semiconductor die are electrically connected to the low-density substrate.