Semiconductor Package Laser Mark Layout Without Thickness Increase
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Solution Overview
Problem
Semiconductor packages with laser marks face challenges in increasing design freedom without increasing package thickness and ensuring good visibility of the marks for consumer recognition.
Innovation Solution
A semiconductor package design incorporating a redistribution level layer with a mesh-type redistribution insulating pattern and a laser mark metal layer, where the laser mark insulating layer exposes the redistribution layer and mesh-type patterns, enhancing visibility and design flexibility without thickness increase.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a laser mark is added to the semiconductor package surface, then visibility and consumer recognition are improved, but package thickness increases
Solution Approach 1:
The laser mark structure is nested within the existing redistribution level layer architecture. The laser mark metal layer is formed within the redistribution layer structure, and the laser mark insulating layer is integrated with the redistribution insulating layer, allowing the laser mark to be embedded within the package's existing layered structure without adding external thickness.
Solution Approach 2:
The laser mark is formed by utilizing the vertical layering of the redistribution level layer rather than adding horizontal thickness. By creating the laser mark metal layer and insulating layer patterns within the existing vertical stack, the visibility enhancement is achieved in the optical dimension while maintaining the same physical thickness envelope.
2Adaptability or versatility
If a laser mark is added to the semiconductor package surface, then design freedom is improved, but device complexity increases
Solution Approach 1:
The redistribution level layer serves multiple functions simultaneously: it provides electrical redistribution connectivity and hosts the laser mark structure for identification. The laser mark metal layer can be formed using the same metal deposition processes as the redistribution layer, and the insulating layers serve both electrical isolation and laser mark definition purposes, reducing the need for separate dedicated structures.
Solution Approach 2:
The laser mark structure is merged with the redistribution level layer, combining identification functionality with the existing electrical interconnection layer. This integration eliminates the need for separate laser mark structures and reduces overall device complexity while maintaining design flexibility.
Data Source
AI summary
A semiconductor package includes an encapsulation layer encapsulating at least one semiconductor chip, and a redistribution level layer disposed on the encapsulation layer. The redistribution level layer includes a redistribution layer and a redistribution insulating layer insulating the redistribution layer, a laser mark area is disposed on the redistribution layer and the redistribution insulating layer, and the redistribution insulating layer of the laser mark area comprises a plurality of mesh-type redistribution insulating patterns arranged apart from each other on a plane and surrounded by the redistribution layer. The redistribution level layer includes a laser mark insulating layer located on the redistribution layer and the redistribution insulating layer, wherein the laser mark insulating layer includes a laser mark exposing the redistribution layer and the mesh-type redistribution insulating patterns in the laser mark area.