High-Temperature Semiconductor Package With Leakage-Control Circuit Stack
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Solution Overview
Problem
Conventional semiconductor device packages struggle to manage high temperatures without damaging printed circuit boards (PCBs) and effectively prevent current leakage in high-power, high-voltage devices like silicon carbide (SiC) devices.
Innovation Solution
A semiconductor package design with a thermally resistant encapsulant and a thermal resistance layer that isolates the high-temperature device from the PCB, using bond wires with low thermal conductivity and a stacked configuration with a lower-threshold voltage device to control leakage, allowing heat radiation away from the PCB.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional packages conduct heat to the PCB, then heat dissipation is achieved, but the PCB temperature exceeds safe operating range
Solution Approach 1:
The patent segments the thermal path by introducing a thermal barrier layer between the device and PCB, allowing the device to operate at high temperature while the PCB remains cool. The package is divided into a hot zone (device) and a cool zone (PCB) separated by the thermal barrier.
Solution Approach 2:
The patent introduces a thermal barrier layer as an intermediary substance between the heat-generating device and the PCB. This mediator blocks heat conduction to the PCB while allowing electrical connection to pass through, resolving the contradiction between heat dissipation and PCB temperature control.
2Power
If SiC devices are used for high power operation, then switching performance is improved, but current leakage increases
Solution Approach 1:
The patent merges a SiC device (for high power switching) with a silicon device (for low leakage control) in a stacked configuration. The two devices work together as a unified system where the SiC device handles high voltage switching and the silicon device suppresses leakage current.
Solution Approach 2:
The patent uses a silicon device as a complementary copy/counterpart to the SiC device. The silicon device replicates the switching function but with superior leakage characteristics, and the two are coordinated through a common gate drive to achieve both high power capability and low leakage.
3Temperature
If die is thermally isolated from PCB, then high temperature operation is enabled, but heat dissipation path is reduced
Solution Approach 1:
The patent applies local quality by providing different thermal characteristics in different parts of the package. The region between the device and PCB has high thermal resistance (thermal barrier layer), while the device package itself has thermal pathways for heat dissipation. This localized thermal management enables high temperature operation without compromising overall heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables high-power semiconductor devices to operate at elevated temperatures without damaging the PCB, effectively preventing current leakage by isolating heat dissipation and using a lower-threshold voltage device to manage switching and prevent leakage.
Implementation Method 1
the package is configured with the die pad at the top of the package, facing away from the PCB... the die operates at a high temperature and radiates heat away from the PCB
Data Source
AI summary
The invention provides a semiconductor device that is thermally isolated from the printed circuit board such that the device operates at a higher temperature and radiates heat away from the printed circuit board. In another embodiment, the semiconductor is stacked onto a second device and optionally thermally isolated from the second device.