Semiconductor Package Passive Device Integration
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Solution Overview
Problem
Conventional semiconductor packages face complexity and high production costs due to the separate integration of passive devices and their electrical connection to the substrate, resulting in a complicated process.
Innovation Solution
A method involving the simultaneous formation of a first inductor and a capacitor on the same layer, using a base material with a metal layer, dielectric layer, and protective layer to encapsulate the components, which reduces thickness and improves production efficiency by integrating passive devices effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If passive devices are integrated in the packaged unit by using a semiconductor process and then electrically connected to the substrate by wire bonding or flip-chip bonding, then the packaged unit can be electrically connected to the substrate, but the process becomes complicated and production cost increases
Solution Approach 1:
The patent merges the passive devices (inductor and capacitor) into a single integrated structure where the inductor's lower electrode serves as the capacitor's lower electrode. This consolidation eliminates the need for separate integration and electrical connection processes, directly reducing process complexity while maintaining reliable electrical connections.
Solution Approach 2:
The lower electrode structure serves multiple functions: it acts as both the lower electrode for the inductor and the lower electrode for the capacitor. This multi-functionality reduces the number of components and simplifies the manufacturing process while ensuring reliable electrical connections for both passive devices.
2Reliability
If passive devices are integrated in the packaged unit by using a semiconductor process and then electrically connected to the substrate by wire bonding or flip-chip bonding, then the packaged unit can be electrically connected to the substrate, but production cost increases
Solution Approach 1:
The patent merges the passive devices (inductor and capacitor) into a single integrated structure where the inductor's lower electrode serves as the capacitor's lower electrode. This consolidation eliminates the need for separate integration and electrical connection processes, directly reducing process complexity while maintaining reliable electrical connections.
Solution Approach 2:
The lower electrode structure serves multiple functions: it acts as both the lower electrode for the inductor and the lower electrode for the capacitor. This multi-functionality reduces the number of components and simplifies the manufacturing process while ensuring reliable electrical connections for both passive devices.
3Productivity
If the first inductor and the first lower electrode of the first capacitor are formed simultaneously on the same layer, then production efficiency is improved, but the thickness of the product increases
Solution Approach 1:
The patent merges the passive devices (inductor and capacitor) into a single integrated structure where the inductor's lower electrode serves as the capacitor's lower electrode. This consolidation eliminates the need for separate integration and electrical connection processes, directly reducing process complexity while maintaining reliable electrical connections.
Solution Approach 2:
The patent utilizes the vertical dimension by forming the dielectric layer between the upper and lower electrodes in the thickness direction, allowing simultaneous formation of inductor and capacitor on the same layer without significantly increasing lateral dimensions, thereby managing product thickness through spatial arrangement.
Data Source
AI summary
The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a base material, a first metal layer, a first dielectric layer, a first upper electrode and a first protective layer. The first metal layer is disposed on a first surface of the base material, and includes a first inductor and a first lower electrode. The first dielectric layer is disposed on the first lower electrode. The first upper electrode is disposed on the first dielectric layer, and the first upper electrode, the first dielectric layer and the first lower electrode form a first capacitor. The first protective layer encapsulates the first inductor and the first capacitor. Whereby, the first inductor and the first lower electrode of the first capacitor are disposed on the same layer, so that the thickness of the product is reduced.


