Semiconductor Package Thermal Diffusion Structure for Heat Dissipation

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Solution Overview

Problem

Semiconductor packages face challenges in managing thermal properties due to increased power consumption and heat generation from high-speed, high-capacity electronic components, necessitating improved thermal management solutions.

Innovation Solution

The semiconductor package design incorporates a thermal diffusion structure with a heat sink and heat slug to efficiently discharge heat generated by the die, utilizing interposer areas and TIMs for effective thermal management.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If electronic components are designed for high speed and increased capacity, then performance is improved, but power consumption increases leading to poor thermal properties

Engineering Contradiction:
ImproveperformanceVSAvoidthermal properties
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent introduces a thermal diffusion structure that extends heat dissipation from the traditional planar direction into the vertical dimension. The heat slug penetrates through the interposer substrate thickness direction, creating a three-dimensional heat dissipation pathway that efficiently conducts heat away from the die in the vertical direction while maintaining package performance.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent introduces an interposer substrate as an intermediary component between the die and the heat dissipation structure. The interposer substrate with integrated thermal diffusion structure acts as a mediator that facilitates efficient heat transfer from the die to the external environment, resolving the thermal management issue while maintaining electrical connectivity and mechanical stability.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Power

If heat is generated in the die, then power consumption is utilized for operation, but heat accumulation occurs affecting adjacent packages and causing substrate warpage

Engineering Contradiction:
Improvepower consumptionVSAvoidsubstrate warpage
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The patent extracts the heat accumulation problem by introducing a dedicated thermal diffusion structure that actively removes heat from the die. The heat slug and associated thermal pathways extract thermal energy from the die region through the interposer substrate, preventing heat accumulation that would otherwise cause substrate warpage and reliability issues.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent applies local quality by concentrating thermal diffusion capabilities specifically in regions where heat generation occurs. The thermal diffusion structure is strategically positioned and configured to provide enhanced heat dissipation exactly where the die generates heat, rather than uniformly distributing thermal management across the entire package.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design enhances thermal dissipation, minimizing heat impact on adjacent components and preventing substrate warpage, thereby improving the reliability and performance of semiconductor packages.

Implementation Method 1

a first thermal interface material (TIM) on the upper die... The interposer is in contact with a top face of the first TIM... heat generated in the lower die or the upper die is discharged through the thermal diffusion structure

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

The thermal diffusion structure includes a heat sink on the top face of the interposer in the first area... heat generated in the first die is discharged through the thermal diffusion structure

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

a second TIM is on the heat sink, and a heat slug is in direct contact with the second TIM so as to cover a side face of the heat sink and a side face of the first package. The heat slug is fixed to the package substrate of the first package

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS12610850B2Semiconductor package and method for manufacturing the same
Publication Date: 2026.04.21 SAMSUNG ELECTRONICS CO LTD
  • US12610850B2 patent drawing
  • US12610850B2 patent drawing
  • US12610850B2 patent drawing

AI summary

A semiconductor package with improved thermal properties is provided. The semiconductor package includes a first package including a first die, an interposer on the first package and including a first area and a second area. A second package is on a top face of the interposer in the second area, and a thermal diffusion structure is on a top face of the interposer in the first area. The thermal diffusion structure is configured so that heat generated in the first die is discharged through the thermal diffusion structure.