Semiconductor Device Parasitic Capacitance Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In the miniaturization of semiconductor devices, parasitic capacitance in transistors poses a significant challenge, leading to reduced responsiveness, increased manufacturing complexity, and variations in transistor characteristics and reliability.
Innovation Solution
A semiconductor device structure is developed with a specific layer configuration and manufacturing process that includes a first insulating layer, an oxide layer, a semiconductor layer, electrode layers, and additional insulating layers, with a chemical mechanical polishing process and heat treatments to reduce parasitic capacitance and oxygen vacancies, thereby improving electrical characteristics and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If transistor miniaturization is pursued to improve device integration, then device density increases, but parasitic capacitance in the vicinity of the transistor increases leading to reduced responsiveness
Solution Approach 1:
The patent extracts and removes parasitic capacitance elements from the transistor structure by carefully designing the insulating layer configuration to eliminate unnecessary capacitive coupling between adjacent transistor components, thereby maintaining responsiveness despite miniaturization
Solution Approach 2:
The patent applies different insulating materials with specific dielectric properties to different regions around the transistor. By using low-k insulating materials in critical areas where parasitic capacitance forms, the patent locally reduces capacitance without affecting overall device density
2Productivity
If transistor miniaturization is pursued to improve device integration, then device density increases, but manufacturing process control becomes more difficult leading to increased variations in transistor characteristics
Solution Approach 1:
The patent optimizes the thickness and material composition parameters of the insulating layers to achieve a balance between miniaturization and manufacturing controllability. By carefully selecting insulating layer thicknesses and dielectric constants, the patent reduces sensitivity to manufacturing variations while maintaining high device density
Solution Approach 2:
The patent employs composite insulating layer structures combining different dielectric materials with complementary properties. This composite approach provides manufacturing robustness by using materials that are less sensitive to process variations, thereby reducing transistor characteristic variations despite miniaturization
3Device complexity
If conventional transistor structures are used to simplify manufacturing, then device complexity is reduced, but parasitic capacitance increases leading to higher power consumption
Solution Approach 1:
The patent segments the insulating structure into multiple functional layers (first insulating layer, second insulating layer, third insulating layer) with distinct roles. This segmentation allows each layer to be optimized for specific functions such as parasitic capacitance reduction and electrical isolation, achieving low power consumption without excessive overall complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces parasitic capacitance, stabilizes the manufacturing process, and enhances the reliability and responsiveness of semiconductor devices by minimizing oxygen vacancies and interface states, resulting in improved electrical performance and reduced power consumption.
Implementation Method 1
a chemical mechanical polishing process and heat treatments to reduce parasitic capacitance and oxygen vacancies
Implementation Method 2
a chemical mechanical polishing process and heat treatments to reduce parasitic capacitance and oxygen vacancies
Data Source
AI summary
A semiconductor device with reduced parasitic capacitance is provided. The semiconductor device includes a first insulating layer; a first oxide layer over the first insulating layer; a semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer over the semiconductor layer; a second insulating layer over the first insulating layer; a third insulating layer over the second insulating layer, the source electrode layer, and the drain electrode layer; a second oxide layer over the semiconductor layer; a gate insulating layer over the second oxide layer; a gate electrode layer over the gate insulating layer; and a fourth insulating layer over the third insulating layer, the second oxide layer, the gate insulating layer, and the gate electrode layer.