Semiconductor Pick-Up Region for Integration and Yield
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Solution Overview
Problem
The miniaturization of semiconductor memory devices is hindered by the high cost of manufacturing equipment and difficulties in the semiconductor manufacturing process, limiting the degree of integration and reliability of micro-patterning technologies.
Innovation Solution
A semiconductor device with a substrate doped with a conductive type dopant, featuring stacked structures with gate electrodes and a pick-up region doped with a higher concentration of the dopant, along with a method of fabricating the device that includes forming stacked structures, counter-doping, and using insulation spacers to enhance integration and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If micro-patterning technologies are used to increase integration, then the degree of integration is improved, but manufacturing cost increases and manufacturing difficulty increases
Solution Approach 1:
The substrate is divided into multiple regions with different doping concentrations, including pick-up regions with higher doping concentration and common source regions with lower doping concentration. This segmentation allows different functional areas to be optimized independently, enabling high integration without requiring uniform complex manufacturing processes across the entire substrate.
Solution Approach 2:
Different regions of the substrate are assigned different doping concentrations tailored to their specific functional requirements. The pick-up regions receive higher doping concentration for optimal voltage supply, while common source regions use lower doping concentration. This local quality approach improves manufacturing efficiency by avoiding the need for uniform high-precision processing across the entire device.
2Quantity of substance
If micro-patterning technologies are used to increase integration, then the degree of integration is improved, but reliability and yield decrease
Solution Approach 1:
The device structure is segmented into stacked structures with gate electrodes and distinct doping regions. This segmentation creates modular units that can be manufactured with standard processes, reducing the impact of manufacturing variations and improving overall reliability and yield while maintaining high integration.
Solution Approach 2:
The doping concentration parameter is changed across different regions of the substrate. By optimizing doping concentration in pick-up regions versus common source regions, the invention achieves high integration with improved reliability, as the parameter optimization compensates for the limitations of micro-patterning technologies.
3Reliability
If voltage supply is not stabilized, then manufacturing is simpler, but device performance and reliability decrease
Solution Approach 1:
Pick-up regions are formed in advance during the manufacturing process with higher doping concentration. This preliminary action ensures voltage supply stability is built into the device structure from the beginning, improving reliability without requiring additional complex voltage stabilization components or processes to be added later.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a highly integrated semiconductor device with increased reliability and yield by stabilizing voltage supply and minimizing misalignment and void defects, thus improving manufacturing efficiency and device performance.
Implementation Method 1
a pick-up region extending in the first direction in the substrate between the pair of stacked structures and doped with the first conductive type dopant. According to an embodiment, a concentration of the first conductive type dopant may be higher in the pick-up region than in the substrate.
Implementation Method 2
forming a pick-up region extending in the first direction in the substrate between the pair of stacked structures and doped with the first conductive type dopant
Data Source
AI summary
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate doped with a first conductive type dopant, a plurality of stacked structures arranged side by side on the substrate and extending in a first direction, each of the stacked structures including gate electrodes spaced apart from each other, the plurality of stacked structures including a pair of stacked structures spaced apart from each other at a first interval in a second direction perpendicular to the first direction, and a pick-up region extending in the first direction in the substrate between the pair of stacked structures and doped with the first conductive type dopant.