Semiconductor Device Pin Line Routing Freedom Capacitance
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Solution Overview
Problem
Semiconductor devices face challenges in achieving high integration, reliability, and low capacitance between pin lines while maintaining a high degree of routing freedom, which are essential for advanced electronic applications.
Innovation Solution
The semiconductor device design includes a logic cell with specific active regions, source/drain patterns, and gate electrodes arranged at precise pitches, along with pin and routing lines that overlap in a controlled manner to optimize routing freedom and reduce capacitance, utilizing a combination of interlayer dielectric layers and via patterns to connect these elements efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If pin lines are extended to increase routing freedom, then routing flexibility is improved, but capacitance between pin lines increases
Solution Approach 1:
The pin lines are configured to extend in the first direction (horizontal) rather than only in the second direction (vertical), utilizing the horizontal dimension to achieve routing freedom while controlling overlap length to minimize capacitance
Solution Approach 2:
The length of pin lines in the second direction is controlled to be less than twice the first pitch, and the overlap region length is controlled to be less than the first pitch, optimizing the balance between routing freedom and capacitance reduction
2Area of stationary object
If semiconductor devices are highly integrated to reduce size, then device density is improved, but manufacturing complexity increases
Solution Approach 1:
The logic cell is divided into distinct regions (first active region, second active region) with separate active patterns, source/drain patterns, and gate electrodes, allowing independent optimization of each segment while achieving high overall integration
Solution Approach 2:
The gate electrodes serve multiple functions by extending across both first and second active patterns, and the interlayer dielectric layers provide both electrical isolation and structural support for multiple routing layers
Data Source
AI summary
Disclosed is a semiconductor device comprising a logic cell including first and second active regions spaced apart in a first direction on a substrate, first and second active patterns on the first and second active regions and extend in a second direction, first and second source/drain patterns on the first and second active patterns, gate electrodes extending in the first direction to run across the first and second active patterns and arranged in the second direction at a first pitch, first lines in a first interlayer dielectric layer on the gate electrodes and each electrically connected to the first source/drain pattern, the second source/drain pattern, or the gate electrode, and second lines in a second interlayer dielectric layer on the first interlayer dielectric layer and extending parallel to each other in the first direction.