Semiconductor Heat Dissipation via Porous Buffer Layer
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Solution Overview
Problem
As electronic products advance towards high performance and miniaturization, the increased layout density of semiconductor components leads to heat concentration issues, potentially damaging the components due to inadequate heat dissipation in limited component volumes, necessitating efficient heat management to ensure normal operation and extend product lifespan.
Innovation Solution
A semiconductor device with high heat dissipation efficiency is achieved through a heat dissipating structure comprising a buffer layer and a first heat spreader, where the buffer layer covers at least 10% of the semiconductor chip's surface and the heat spreader is bonded to the chip via the buffer layer, ensuring effective heat transfer and retention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the layout density of semiconductor components is increased to achieve high performance and miniaturization, then the functionality and integration of electronic products are improved, but heat concentration increases and heat dissipation becomes insufficient
Solution Approach 1:
The patent introduces a buffer layer with three-dimensional structure (protrusions and recesses) on the heat-generating surface, creating vertical heat dissipation pathways in addition to horizontal heat spreading. This dimensional transformation allows heat to be dissipated through multiple spatial dimensions, effectively managing heat concentration in high-density layouts.
Solution Approach 2:
The buffer layer is designed with a porous structure containing multiple protrusions and recesses, creating void spaces that facilitate heat dissipation. This porous configuration increases the surface area for heat transfer and provides channels for heat to escape from the concentrated regions, directly addressing the heat management challenge in miniaturized devices.
2Temperature
If a heat sink is provided on the semiconductor chip to transfer heat to the outside, then heat dissipation is improved, but the contact between the heat sink and the chip surface may be insufficient due to surface irregularities
Solution Approach 1:
The buffer layer features localized protrusions and recesses that create multiple discrete contact points between the heat sink and the chip surface. This local quality variation ensures that heat transfer occurs through numerous distributed interfaces rather than relying on a single large contact area, improving both heat dissipation efficiency and contact reliability.
Solution Approach 2:
The buffer layer with its pre-formed protrusion and recess structure is applied to the chip surface before the heat sink is attached. This preliminary action creates an optimized contact topology that ensures reliable thermal coupling, eliminating the need for additional surface preparation or complex bonding processes.
3Temperature
If the coverage rate of the buffer layer on the semiconductor chip surface is increased, then heat dissipation efficiency is improved, but the structural complexity and manufacturing difficulty increase
Solution Approach 1:
The patent applies the buffer layer with protrusions and recesses to cover the entire heat-generating surface of the chip, ensuring maximum contact area with the heat sink. This excessive coverage approach guarantees optimal heat dissipation performance by eliminating any uncovered regions that could become thermal bottlenecks, while the standardized pattern keeps manufacturing complexity manageable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device effectively dissipates heat, ensuring normal operation and extending the lifespan of electronic products by maintaining a close and reliable contact between the semiconductor chip and the heat spreader, while preventing physical damage and environmental impacts.
Implementation Method 1
The first heat spreader is disposed on the buffer layer and bonded to the first surface of the semiconductor chip through the buffer layer
Implementation Method 2
a first heat spreader... bonded to the first surface of the semiconductor chip through the buffer layer
Implementation Method 3
transfer heat to the outside of the package structure by configuring the heat sink to be in contact with the air
Data Source
AI summary
A semiconductor device with high heat dissipation efficiency includes a base structure, a semiconductor chip, a heat dissipating structure, and a package body. The semiconductor chip is disposed on the base structure and has a first surface distant from the base structure. The heat dissipating structure includes a buffer layer and a first heat spreader. The buffer layer is disposed on the first surface of the semiconductor chip and a coverage rate thereof on the first surface is at least 10%. The first heat spreader is disposed on the buffer layer and bonded to the first surface of the semiconductor chip through the buffer layer. The package body encloses the semiconductor chip and the heat dissipating structure, and the package body and the buffer layer have the same heat curing temperature.