Semiconductor Device Program Voltage Control Logic

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Solution Overview

Problem

Current semiconductor devices face inefficiencies in program operation time due to repeated program and verification operations, which are time-consuming and power-intensive, especially in non-volatile memory devices like flash memory.

Innovation Solution

The semiconductor device employs a control logic to detect and store the number of program pulses during an initial program operation, using this information to determine subsequent program voltage levels, thereby reducing the number of pulses required for subsequent operations through a FIFO buffer system.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If repeated program and verification operations are performed to ensure data programming, then reliability of data storage is improved, but program operation time increases

Engineering Contradiction:
Improvedata storage reliabilityVSAvoidprogram operation time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies preliminary action by detecting and storing the number of program pulses during a first program operation, then using this pre-acquired information to determine the initial level of program voltage in subsequent operations. This allows the system to skip redundant verification steps and directly adjust voltage levels based on historical data, thereby reducing program operation time while maintaining data storage reliability through optimized voltage control

Inventive Principle:
Principle #10Preliminary action

2Reliability

If repeated program and verification operations are performed to ensure data programming, then reliability of data storage is improved, but power consumption increases

Engineering Contradiction:
Improvedata storage reliabilityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent implements feedback by using the detected number of program pulses from previous operations to dynamically adjust the initial level of program voltage in subsequent operations. This feedback mechanism allows the system to optimize power consumption by avoiding redundant high-voltage application and verification cycles, while still ensuring reliable data storage through intelligent voltage level selection based on operational history

Inventive Principle:
Principle #23Feedback

3Loss of time

If the number of program pulses is detected and stored to optimize subsequent operations, then program operation time is reduced, but device complexity increases

Engineering Contradiction:
Improveprogram operation timeVSAvoidcontrol logic complexity
Core Design Contradiction:
Loss of timeVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by pre-detecting and storing program pulse information in a register during initial operations. This stored information is then reused to determine voltage levels in subsequent operations, reducing program time without requiring complex real-time analysis. The control logic complexity is minimized by using simple storage and retrieval operations rather than complex computational algorithms

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly reduces program operation time by optimizing the program voltage levels, enhancing efficiency and reducing power consumption in semiconductor devices.

Implementation Method 1

a control logic suitable for detecting the number of pulses of the program voltage received from the memory cell array

Methodology Applied
Scientific EffectElectrical signal detection:

Implementation Method 2

storing bias information corresponding to the detected number of program pulses in a first-in-first-out (FIFO) buffer

Methodology Applied
Scientific EffectDigital signal storage:

Data Source

PatentUS9105346B2Semiconductor device and method for operating the same
Publication Date: 2015.08.11 SK HYNIX INC
  • US9105346B2 patent drawing
  • US9105346B2 patent drawing
  • US9105346B2 patent drawing

AI summary

A semiconductor device comprises a memory cell array comprising memory cells coupled to word lines and bit lines, a voltage generator suitable for generating a drive voltage to be applied to a selected word line, and a control logic suitable for detecting the number of pulses of a program voltage received from the memory cell array in a program operation, storing bias information corresponding to the detected number of pulses in a register, and controlling a level of the program voltage for a subsequent program operation based on the bias information.