Semiconductor Device Structure with Protective Layer Extension
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Solution Overview
Problem
As semiconductor devices continue to shrink in size, the complexity of fabrication processes increases, making it challenging to form reliable semiconductor devices at smaller scales.
Innovation Solution
The process involves forming a semiconductor device structure using nanostructure transistors, which are patterned using methods like photolithography and self-aligned processes. This includes creating a multilayer structure with sacrificial layers and channel layers, followed by the formation of gate stacks and spacer structures to define the transistor channels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency and cost are improved, but fabrication process complexity and difficulty increase
Solution Approach 1:
The fabrication process is divided into multiple sequential steps including forming sacrificial layers, forming spacer layers, selectively removing materials, and forming gate structures. Each step builds upon the previous one, breaking down the complex task of creating nanoscale transistors into manageable, repeatable operations that maintain precision while scaling to smaller features
Solution Approach 2:
Sacrificial layers are formed in advance before the actual transistor structures are created. These preliminary layers serve as templates that guide subsequent processing steps, enabling precise positioning of channels and gates at nanoscale dimensions without requiring direct manipulation at that scale
2Area of stationary object
If feature sizes continue to decrease to increase functional density, then chip area utilization is improved, but manufacturing precision requirements increase
Solution Approach 1:
The spacer layers self-align to the sacrificial layers through conformal deposition, automatically establishing precise dimensional relationships between components. This self-aligned process eliminates the need for separate alignment operations, maintaining manufacturing precision while enabling smaller feature sizes
Solution Approach 2:
The thickness of spacer layers and sacrificial layers is precisely controlled through deposition parameters, allowing the feature sizes to be scaled down while maintaining consistent manufacturing precision. By changing layer thickness parameters rather than attempting to directly pattern smaller features, the process maintains precision across different scaling generations
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The semiconductor device structure includes a cap layer over the gate stack. The semiconductor device structure includes a protective layer over the cap layer. A lower portion of the protective layer extends into the cap layer. The semiconductor device structure includes a contact structure passing through the protective layer and the cap layer.