Semiconductor Device With Recessed Electrodes For Current Dispersion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices using III-V or II-VI compound semiconductor materials face reduced light emitting efficiency due to decreased current dispersion efficiency when operating at high currents, particularly in ultraviolet wavelength ranges.
Innovation Solution
The semiconductor device incorporates a semiconductor structure with a first and second conductive semiconductor layer, an active layer, and a plurality of recesses, along with specific electrode and insulating layer configurations to enhance current dispersion efficiency, including a trench surrounding the recesses and varying area ratios for improved light extraction and current distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If aluminum composition is increased to generate ultraviolet light, then light emitting capability is improved, but current dispersion efficiency is lowered
Solution Approach 1:
The patent divides the contact structure into multiple segments: a contact pad at the top, a contact hole through the insulating layer, and a contact electrode at the bottom. This segmentation allows current to be distributed through multiple pathways, improving current dispersion efficiency while maintaining high aluminum composition for ultraviolet light emission.
Solution Approach 2:
The patent applies different properties to different regions: the insulating layer has high dielectric strength to isolate current paths, the contact hole provides a conductive pathway through the insulator, and the contact electrode at the bottom provides a large surface area for current distribution. This local differentiation resolves the contradiction between high aluminum content and current dispersion.
2Illumination intensity
If high current is applied to increase light output, then optical output is improved, but light emitting efficiency is lowered
Solution Approach 1:
The patent transitions from a two-dimensional planar contact structure to a three-dimensional vertical structure with contact holes penetrating through the insulating layer. This dimensional change allows current to be injected from the bottom contact electrode through the contact hole to the active layer, enabling better current distribution and maintaining high light emitting efficiency even at high current levels.
Solution Approach 2:
The contact hole acts as an intermediary structure that bridges the insulating layer and the bottom contact electrode. It provides a controlled conductive pathway that mediates between the high-voltage bottom electrode and the active layer, enabling efficient current injection without direct contact between the large-area bottom electrode and the sensitive active layer, thus maintaining efficiency at high currents.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves current dispersion efficiency and optical output, even at high currents, by optimizing the distribution and injection of electrons and holes, thereby enhancing the light emitting efficiency in ultraviolet wavelength ranges.
Implementation Method 1
an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer
Implementation Method 2
a plurality of recesses disposed up to a partial region of the first conductive semiconductor layer through the second conductive semiconductor layer and the active layer
Data Source
AI summary
An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses extending through the second conductive semiconductor layer and the active layer and arranged up to a partial region of the first conductive semiconductor layer; a plurality of first electrodes arranged inside the plurality of recesses and electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first conductive layer electrically connected to the plurality of first electrodes; a second conductive layer electrically connected to the second electrode; and an electrode pad electrically connected to the second conductive layer, wherein the electrode pad comprises a first electrode pad and a second electrode pad which are spaced apart from each other, and the area ratio of the electrode pad to the second conductive layer is 1:20 to 1:27.