Semiconductor Devices TRIZ Cases

Optical pumping of segmented quantum wells in a conversion element improves efficiency by over 30% while narrowing spectral width.

Insulating layer between emitter and stabilizing plates suppresses oscillation while reducing ON voltage and power dissipation.

Epitaxial growth defines the channel region in a channel-last vertical transistor, eliminating etch variability for precise gate length control.

A semiconductor device uses a segmented gate electrode to minimize capacitance between the gate and drain electrodes.

A trench-junction-barrier Schottky diode integrates a PN junction to screen the Schottky effect and reduce reverse current.

A semiconductor device incorporates a drain buffer region and an n-type well region to manage electrical stress.

Ultra-high dielectric constant materials in gate barriers flatten electric fields to boost breakdown voltage without increasing device complexity.

A soluble member covers lateral surfaces of light-emitting elements to enable precise removal and space creation for optical components.

A silicon carbide trench MOSFET uses distinct pillar regions to distribute electric field stress across the gate insulating film.

An aluminum nitride gate protection layer coats p-GaN cap sidewalls to eliminate leakage current caused by high trap levels during metal gate formation.

A heterojunction bipolar transistor uses segmented emitter and collector regions to optimize device geometry.

A light emitting diode structure uses a segmented reflective layer to boost reflectance across short wavelength bands.

A TiO2 interlayer enhances the hole Schottky barrier height, suppressing dark current without compromising photocharge collection.

A wavelength converting element with optimized height-to-width ratio produces a controlled non-uniform angular color distribution from an LED light source.

A FinFET source/drain formation method using lateral epitaxy from protected channel facets.

An SOI semiconductor device incorporates an intermediate N-type region within the drift layer to suppress depletion layer extension toward the drain.

A conductive metal oxide layer prevents gold diffusion in nitride semiconductor electrodes during high temperature annealing.

Vertical transistor structure with recessed field plate trenches surrounding multiple gate electrodes to increase channel density.

Applying a reflective coating to lateral sides of package-free LED dies controls edge emission that degrades color-over-angle uniformity.

A semiconductor device uses a low resistivity region between p-type regions to reduce on-resistance in the Schottky barrier diode.

Non-parallel reflective flakes in a transmissive carrier redirect light to lateral openings, preventing top surface emission and reducing device thickness.

A MOSFET structure uses selective epitaxy to deposit a high-bandgap semiconductor layer in the drain region, enhancing carrier mobility.

Segmented field electrodes and termination structures with homojunctions reduce on-state resistance while maintaining blocking capability despite wafer bowing.

A GaN light emitting diode integrates a spark gap between electrode pads to provide electrostatic discharge protection.

Distinct p-side and n-side pillar terminals enable visual anode cathode discrimination during wafer-level mounting.

Segmented mounting board pads and high-conductivity metal ribbons resolve the contradiction between improved heat dissipation and increased device complexity.

A vertical bidirectional switch uses a front surface gate electrode connected to the rear via a conductive chip crossing.

Incorporating a temperature dependent band structure in the gate electrode adjusts threshold voltage to reduce current leakage at elevated temperatures.

A light emitting diode with a side reflection layer redirects lateral light to the emission surface.

Segmenting the emitter region increases the sense ratio, reducing overcurrent protection variations and improving reliability.

Pulsed gates extend depletion width beyond threshold voltage, allowing higher epi doping to reduce on-resistance while maintaining blocking voltage.

A semiconductor light-receiving device uses a p-type conductive region to constrain the electric field.

A trench power device structure connects top and side contacting surfaces with a metallic layer to form a Schottky barrier interface.

Doped wide-bandgap barrier layers confine channel carriers and dissipate heat, resolving the trade-off between high breakdown voltage and device complexity.

Acute angle gate sidewalls enhance metal filling and reduce short channel effects in finFET transistors.

Alternating silicon germanium and silicon layers create a uniform shell channel, reducing fabrication complexity while maintaining device performance.

A distributed bragg reflector structure reflects blue and yellow light from an LED substrate to enhance photon recycling efficiency.

A semiconductor separating layer decouples column structures from active regions in power MOSFETs.

A semiconducting gate layer clamps internal voltage to a depletion threshold.

A dielectric encapsulation layer protects the AlGaAs current spreading layer from corrosion, maintaining consistent light output in damp environments.

Recessed electrodes and segmented contact pads distribute current uniformly across the active layer, resolving low dispersion efficiency at high currents.

Termination region with higher dopant concentration extends electrically safe operating area in high-voltage MOSFETs.

A nanowire transistor structure uses a protruded gate spacer to enable epitaxial source drain growth.

An insulation layer embedded in reflective layer through-holes prevents silver peeling by increasing adhesion strength at critical interfaces.

Removing the sacrificial material leaves a gap that minimizes chemical intermixing and reduces edge leakage.

Varied interlayer insulating film openings reduce carrier density at shorter trench portions, enhancing switching performance.

Multi-layer field plates shift maximum electric field peaks to the termination edge, preventing avalanche carrier generation during reverse recovery operations.

Segmented polygonal ring and radial bars reduce series resistance in gallium nitride diodes.

Matching the cover member color to the wavelength conversion member eliminates multi-color visibility when not emitting light, improving aesthetic appeal.