Temperature Compensating Gate Structures for Transistor Leakage

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Solution Overview

Problem

MOSFETs experience increased current leakage at high temperatures, leading to power consumption issues and decreased performance, which existing designs attempt to mitigate by increasing threshold voltage, resulting in increased power consumption and performance degradation across broader PVT corners.

Innovation Solution

Incorporating a temperature compensation material with a temperature-dependent band structure or polarization in the gate structure of transistors, such as Rubidium, Caesium, Iron, hafnium zirconate, or bismuth ferrite, to dynamically adjust the threshold voltage and maintain off-state current within an acceptable range, thereby reducing temperature-induced current leakage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-generated harmful factors

If threshold voltage is increased to reduce current leakage at high temperatures, then off-state current decreases, but power consumption and performance degradation increase across broader PVT corners

Engineering Contradiction:

Improvecurrent leakageVSAvoidperformance

Core Design Contradiction:

Object-generated harmful factorsVSProductivity

Solution Approach 1:

The patent changes the physical state of the gate electrode material from conventional metal to a material exhibiting resistive switching behavior. This material parameter change enables dynamic adjustment of threshold voltage based on temperature conditions, reducing current leakage without permanent performance degradation. The resistive switching material transitions between high and low resistance states in response to temperature variations, automatically compensating for thermal effects.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The gate electrode material performs self-regulation of threshold voltage in response to temperature changes without external control. The resistive switching material inherently responds to thermal conditions by changing its resistance state, automatically reducing current leakage when temperature increases and restoring performance when temperature decreases, eliminating the need for external compensation circuits.

Inventive Principle:

Principle #25Self-service

2Reliability

If excess performance margin is designed to maintain desired performance at higher temperatures, then performance at elevated temperature is preserved, but power consumption increases

Engineering Contradiction:

Improveperformance at elevated temperatureVSAvoidpower consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent introduces dynamic threshold voltage adjustment through resistive switching material that adapts to temperature conditions in real-time. Instead of designing for worst-case static margins, the system dynamically optimizes performance by switching between resistance states based on actual temperature, maintaining reliability at elevated temperatures while minimizing power consumption during normal operation.

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The gate electrode material's resistance parameter changes in response to temperature variations, enabling the device to maintain desired performance margins only when necessary. The resistive switching material transitions to high resistance state at elevated temperatures to preserve performance while remaining in low resistance state during normal operation to minimize power consumption.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively reduces current leakage and improves power performance across a wider range of temperatures, maintaining efficient integrated circuit operation and energy efficiency.

Implementation Method 1

The temperature compensation material has a temperature dependent band structure, work-function, or polarization, thereby dynamically adjusting the threshold voltage (VT) of the transistor in response to changes in operating temperature

Methodology Applied

Scientific EffectTemperature-dependent band structure:

Implementation Method 2

Methodology Applied

Scientific EffectTemperature-dependent work-function:

Implementation Method 3

Methodology Applied

Scientific EffectTemperature-dependent polarization: Polarisation

Implementation Method 4

a gate dielectric layer between the gate electrode and the channel region

Methodology Applied

Scientific EffectDielectric insulation: Dielectric

Data Source

PatentUS10553694B2Transistors with temperature compensating gate structures

Publication Date: 2020.02.04 INTEL CORP

AI summary

Techniques are disclosed for forming semiconductor integrated circuits including a channel region, a gate dielectric between the gate electrode and the channel region, a first layer between the gate dielectric and the gate electrode, the first layer comprising temperature compensation material. In addition, the integrate circuit includes a source region adjacent to the channel region, a source metal contact on the source region, a drain region adjacent to the channel region, and a drain metal contact on the drain region. The temperature compensation material has a temperature dependent band structure, work-function, or polarization that dynamically adjusts the threshold voltage of the transistor in response to increased operating temperature to maintain the off-state current Ioff stable or otherwise within an acceptable tolerance. The temperature compensation material may be used in conjunction with a work function material to help provide desired performance at lower or non-elevated temperatures.