Semiconductor Device Smart Refresh Control Circuit
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Solution Overview
Problem
As semiconductor devices integrate more densely, the gap between memory cells and word lines decreases, leading to interference effects that increase the probability of data loss, necessitating additional refresh operations to prevent data loss due to charge variations in cell capacitors.
Innovation Solution
A semiconductor device is designed with a latch circuit to store row addresses for smart refresh operations and a refresh control circuit that compares input and stored row addresses, omitting smart refresh operations when they match, thereby reducing current consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional smart refresh operations are performed for adjacent word lines to prevent data loss, then data reliability is improved, but current consumption increases
Solution Approach 1:
The refresh control circuit compares the input row address with the stored row address from the latch circuit to determine whether a smart refresh operation is needed. This feedback mechanism prevents redundant refresh operations on already refreshed word lines, reducing unnecessary current consumption while maintaining data reliability
Solution Approach 2:
The latch circuit automatically stores the row address information and the refresh control circuit autonomously compares addresses to control the refresh operation. This self-service mechanism eliminates the need for external control logic to track which word lines have been refreshed, reducing system complexity and power consumption
2Use of energy by moving object
If row address information is stored in a latch circuit to enable selective smart refresh, then current consumption is reduced, but device complexity increases
Solution Approach 1:
The latch circuit is integrated into the existing memory device architecture, combining the address storage function with the refresh control logic. This merging approach adds minimal complexity while achieving significant power reduction by reusing existing circuit resources
Data Source
AI summary
A semiconductor device may include a latch circuit configured for storing a row address including information on a position where a smart refresh operation has been performed, as a storage address. The semiconductor device may include a refresh control circuit configured for controlling, depending on a result of comparing a row address inputted from an exterior and the storage address, a smart refresh operation to be performed for the row address, and omitting the smart refresh operation based on the row address and the storage address being the same combination.