Semiconductor Region Layout for Isolated Multi-Device Integration
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Solution Overview
Problem
The integration of logic transistors, high-voltage transistors, and non-volatile memory structures on a single substrate poses challenges due to the need for different fabricating processes, as existing methods are not compatible across these devices, leading to interference and process complexities.
Innovation Solution
A semiconductor structure and fabricating method that divides the substrate into distinct regions with specific mask structures and gate formations, allowing for separate processing of each device type while minimizing cross-regional interference through trench formation and anti-reflection coating techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If multiple device types (logic transistors, high voltage transistors, non-volatile memory structures) are integrated on a single substrate, then chip size is reduced and integration is increased, but different fabricating processes are required for each device type leading to process incompatibility and interference
Solution Approach 1:
The substrate is divided into distinct device regions (logic device region, high voltage device region, non-volatile memory device region), each with its own mask structure (first mask structure, second mask structure, third mask structure). This segmentation allows independent process optimization for each device type while maintaining overall integration on a single substrate, resolving the contradiction between reduced chip size and increased process complexity.
2Ease of manufacture
If a single mask structure is used across the entire substrate, then fabrication process is simplified, but process steps in one region interfere with devices in other regions
Solution Approach 1:
Different mask structures are applied to different device regions: first mask structure for logic devices, second mask structure for high voltage devices, and third mask structure for non-volatile memory devices. This local differentiation ensures that process steps in one region do not interfere with devices in other regions, maintaining both manufacturing feasibility and device isolation reliability.
Data Source
AI summary
A semiconductor structure includes a substrate. The substrate is divided into a first element region, a second element region and a boundary region. The boundary region is disposed between the first element region and a second element region. A first mask structure covers the first element region. A second mask structure is disposed in the second element region. A logic gate structure is disposed within the second element region.