Semiconductor Device Resistive Field Plate Ground Conductor Film
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Solution Overview
Problem
Semiconductor devices with resistive field plates experience voltage drops that affect the source and gate regions, leading to insufficient depletion and reduced breakdown voltage due to electric field concentration.
Innovation Solution
A semiconductor device design featuring a resistive field plate interposed between the drain and source regions, with an outermost peripheral ground conductor film and a second ground conductor film or a floating conductor film to prevent voltage drops and electric field concentration, ensuring adequate depletion of the source regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the field plate is disposed at a position spaced from the source regions, then the effect of voltage drop on source regions is reduced, but the breakdown voltage is reduced due to electric field concentration in the empty region
Solution Approach 1:
A ground conductor film is introduced as an intermediary element between the field plate and the source region. This ground conductor film acts as a mediator that prevents direct electric field concentration in the empty region while maintaining the spacing benefit. The ground conductor film provides a controlled path for electric field lines, thereby increasing breakdown voltage without causing harmful field concentration.
2Device complexity
If a resistive field plate is used between drain and source regions, then the device structure is simplified, but voltage drops occur affecting source and gate regions leading to insufficient depletion
Solution Approach 1:
The field plate structure is segmented into multiple conductive regions with different electrical characteristics. The field plate is divided into a first conductive region (with first conductivity type) and a second conductive region (with second conductivity type), allowing different portions to serve different functions - one for field control and another for maintaining proper voltage levels to ensure source region depletion.
Solution Approach 2:
Different regions of the field plate are assigned different conductivity types and electrical properties. The first conductive region has first conductivity type while the second conductive region has second conductivity type, creating local quality variations that optimize both the field control function and the voltage maintenance function in different spatial locations of the same structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively increases the breakdown voltage by preventing voltage drops and electric field concentration, ensuring efficient operation of the semiconductor device.
Implementation Method 1
a resistive field plate which is disposed on the semiconductor region between the drain region and the source regions, is electrically connected to the drain region and the ground
Implementation Method 2
an outermost peripheral ground conductor film disposed on the semiconductor layer between the outermost peripheral portion of the field plate and the source/gate region so as to surround the field plate, the outermost peripheral ground conductor film being electrically connected to ground
Data Source
AI summary
A semiconductor device including a semiconductor layer, a drain region formed at a surface region of the semiconductor layer, and a source/gate region including a source region and a gate region, which are alternatively arranged so as to be electrically connected to each other. The device further includes a resistive field plate that is disposed on the semiconductor layer between the drain region and the source/gate region and spirally wound in a top view. The field plate including an innermost peripheral portion electrically connected to the drain region and an outermost peripheral portion electrically connected to ground. An outermost peripheral ground conductor film is disposed on the semiconductor layer between the outermost peripheral portion of the field plate and the source/gate region. Additionally, a second ground conductor film is disposed on the semiconductor layer between the outermost peripheral portion of the field plate and the outermost ground conductor film.