Semiconductor Resistor With Localized High-Resistivity Corners
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Solution Overview
Problem
The semiconductor industry faces challenges in forming high-voltage resistors that do not increase the size and cost of semiconductor devices while minimizing high electric fields, which can lead to reduced device performance.
Innovation Solution
A high-voltage resistor is formed using a pattern with sides made from a conductor material and corners made from a higher resistance material, capacitively coupled to the semiconductor substrate, to reduce electric fields and maintain reverse breakdown voltage, allowing for a compact device design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large resistance value is formed in the semiconductor device, then the resistance performance is improved, but the device size increases
Solution Approach 1:
The patent applies local quality by using different materials with different resistivities in different regions of the resistor structure. Specifically, polysilicon with higher resistivity is used in corner regions while metal interconnect material with lower resistivity is used in side regions. This local differentiation allows the corner regions to contribute more to the overall resistance value, enabling high resistance performance without requiring a large overall device area.
2Reliability
If a high-voltage resistor is formed to achieve high resistance value, then the resistance performance is improved, but the electric field increases
Solution Approach 1:
The patent uses local quality by assigning different materials to different geometric regions. The polysilicon material with higher resistivity is specifically placed in corner regions where electric field concentration is most problematic, while metal interconnect material is used in side regions. This strategic placement reduces electric field concentration in critical areas while maintaining the required resistance value.
Solution Approach 2:
The patent employs composite materials by combining polysilicon and metal interconnect material in a single resistor structure. The polysilicon provides high resistivity for reducing electric field effects, while the metal interconnect material provides low resistivity pathways that maintain overall resistance performance. This composite approach allows simultaneous optimization of both electric field management and resistance characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces electric fields within the semiconductor device, improves breakdown voltage, and allows for a smaller device size without compromising performance, thus addressing the issues of size and cost while enhancing device reliability.
Implementation Method 1
A high-voltage resistor is formed using a pattern with sides made from a conductor material and corners made from a higher resistance material, capacitively coupled to the semiconductor substrate, to reduce electric fields
Data Source
AI summary
In an embodiment, a semiconductor device includes a resistor that overlies a doped region of the semiconductor device. The resistor is formed into a pattern of a polygon spiral. An embodiment of the pattern of the resistor includes sides and corners. The material of the sides has a low resistivity and the material of the corners has a higher resistivity.