Semiconductor Device Substrate Leakage Reduction via Resistor-Connected Thyristor
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Solution Overview
Problem
Semiconductor devices face challenges in reducing substrate leakage and improving electrostatic discharge (ESD) protection, as existing technologies are inadequate in effectively managing undesired current and breakdown voltage.
Innovation Solution
A semiconductor device design incorporating a thyristor with an equivalent NPN transistor and PNP transistor, where the base of the NPN transistor is electrically connected to the collector via a resistor element, reducing substrate leakage and enhancing ESD protection by directing undesired current to the emitter and increasing breakdown voltage through a polysilicon resistor element.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor structure is used, then the device structure is simple, but the substrate leakage is high and ESD protection is insufficient
Solution Approach 1:
The semiconductor device is segmented into multiple functional regions including a first doped region, a second doped region, a third doped region, and a fourth doped region, each with specific doping types and concentrations. This segmentation creates distinct functional zones that work together to provide ESD protection while controlling substrate leakage, transforming a simple structure into a multi-region protective architecture.
Solution Approach 2:
A resistor element is introduced as an intermediary component electrically connected between the second doped region and the third doped region. This resistor serves as a mediator to control current flow, create potential drops, and regulate the interaction between different doped regions, thereby enhancing ESD protection and reducing substrate leakage through controlled electrical resistance.
2Reliability
If existing technologies are used, then the manufacturing process is simple, but the substrate leakage cannot be effectively reduced
Solution Approach 1:
Different doped regions are assigned specific local qualities with varying doping types (n-type or p-type) and doping concentrations. The first doped region has a first doping type, the second doped region has a second doping type opposite to the first, the third doped region has the first doping type, and the fourth doped region has the second doping type. This local quality differentiation enables precise control of substrate leakage in specific areas while maintaining overall device functionality.
Solution Approach 2:
The invention utilizes parameter changes in doping concentrations and doping types to control substrate leakage. By varying the doping concentration in each region (first doped region, second doped region, third doped region, fourth doped region) and changing doping types between adjacent regions, the electrical properties are optimized to reduce substrate leakage without requiring completely new manufacturing processes.
3Reliability
If a resistor element is added to connect base to collector, then the potential drop increases and substrate leakage reduces, but the device complexity increases
Solution Approach 1:
The resistor element is merged with the existing doped region structure, where the resistor is electrically connected between the second doped region and the third doped region that are already part of the semiconductor device architecture. This merging approach integrates the leakage control function into the existing structure rather than adding a completely separate component, thereby reducing the increase in device complexity.
Solution Approach 2:
The resistor element serves multiple functions simultaneously: it creates a potential drop between the base and collector, controls substrate leakage, and regulates current flow between doped regions. This multi-functionality allows a single component to address multiple reliability issues, reducing the need for additional separate components and thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces substrate leakage and improves ESD protection, achieving a significant reduction in undesired current flow and increasing breakdown voltage, as demonstrated by the semiconductor device's manufacturing method and structural design.
Implementation Method 1
the base of the equivalent NPN transistor is electrically connected to the collector of the equivalent NPN transistor via a resistor element; as such, a potential drop is generated between the base and the collector of the equivalent NPN transistor
Implementation Method 2
the undesired current can be directed to the emitter of the equivalent NPN transistor, and hence, the substrate leakage of the semiconductor device is reduced, and the electrostatic discharge (ESD) protection to the device is improved
Data Source
AI summary
A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate, a first doping region, a first well, a resistor element, and a first, a second, and a third heavily doping regions. The first well and the third heavily doping region are disposed in the first doping region, which is disposed on the substrate. The first heavily doping region and the second heavily doping region, which are separated from each other, are disposed in the first well. The second and the third heavily doping regions are electrically connected via the resistor element. Each of the substrate, the first well, and the second heavily doping region has a first type doping. Each of the first doping region, the first heavily doping region, and the third heavily doping region has a second type doping, complementary to the first type doping.