Semiconductor Reverse Engineering Protection via Invisible Bias Generators

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Solution Overview

Problem

Existing semiconductor devices are vulnerable to reverse engineering techniques, as their physical geometry reveals their logic functions, allowing unauthorized access to circuit design.

Innovation Solution

The implementation of invisible bias generators (IBGs) with identical geometries but different operating characteristics, such as high and low voltage transistors or silicided and non-silicided resistors, which obscure the logic functions, making it difficult to determine the device's operation through conventional teardown methods.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If conventional semiconductor device design is used, then the device structure is simple and easy to manufacture, but the device is vulnerable to reverse engineering as physical geometry reveals logic functions

Engineering Contradiction:
Improvevulnerability to reverse engineeringVSAvoiddevice structure complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent applies parameter changes by introducing invisible bias generators that have identical physical geometries but different electrical characteristics (bias voltages). This changes the electrical parameters of the device while maintaining the same physical structure, making reverse engineering difficult because the geometry no longer reveals the logic function. The bias generators are configured with different threshold voltages or bias levels that are not detectable through physical inspection alone.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invisible bias generators act as intermediaries between the physical device structure and the logic function. These bias generators obscure the relationship between geometry and logic function by introducing an intermediate layer of electrical complexity. The bias generators mediate the connection between the visible physical structure and the hidden logic operations, preventing direct inference of logic functions from physical geometry.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If cryptographic techniques are used to protect logic configuration data, then data protection is improved, but the device remains vulnerable to physical reverse engineering teardown techniques

Engineering Contradiction:
Improvedata protectionVSAvoidphysical reverse engineering vulnerability
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent segments the device into visible structural components and hidden functional components. The invisible bias generators represent the hidden segment that performs critical functions but cannot be identified through physical inspection. This segmentation separates the detectable physical structure from the undetectable logic-determining elements, making teardown techniques ineffective while maintaining data protection.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the detectability parameters of critical device components. By configuring bias generators with electrical parameters (bias voltages, threshold levels) that are invisible to physical inspection methods, the patent makes the critical logic-determining parameters undetectable through conventional teardown techniques, thereby protecting against physical reverse engineering while maintaining cryptographic protection.

Inventive Principle:
Principle #35Parameter changes

3Difficulty of detecting and measuring

If two or more logic devices have identical physical geometry, then reverse engineering difficulty increases, but device manufacturing complexity increases

Engineering Contradiction:
Improvereverse engineering difficultyVSAvoidmanufacturing complexity
Core Design Contradiction:
Difficulty of detecting and measuringVSEase of manufacture

Solution Approach 1:

The patent applies local quality by introducing subtle local variations in the bias generator configurations while maintaining overall geometric uniformity. The local electrical characteristics (bias voltages, threshold levels) differ between devices with identical global geometries. This allows manufacturing to use standardized processes for the overall structure while introducing localized electrical property variations that prevent reverse engineering.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The invisible bias generators serve multiple functions: they maintain identical physical geometries for ease of manufacturing while simultaneously providing different logical functions through varied electrical characteristics. This multi-functionality allows the same physical structure to perform different logic operations based on invisible electrical parameters, reducing manufacturing complexity while increasing reverse engineering difficulty.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentEP2915257B1Semiconductor device having features to prevent reverse engineering
Publication Date: 2020.07.01 VERISITI LLC
  • EP2915257B1 patent drawingFigure 1~2
  • EP2915257B1 patent drawingFigure 3
  • EP2915257B1 patent drawingFigure 4

AI summary

It is desirable to design and manufacture electronic chips that are resistant to modern reverse engineering techniques. Disclosed is a method and device that allows for the design of chips that are difficult to reverse engineer using modern tear down techniques. The disclosed device uses devices having the same geometry but different voltage levels to create different logic devices. Alternatively, the disclosed uses devices having different geometries and the same operating characteristics. Also disclosed is a method of designing a chip using these devices.