Semiconductor Device With Ring-Shaped Regions For Breakdown Voltage Stability
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Solution Overview
Problem
Semiconductor devices face challenges in maintaining high breakdown voltage reliability due to external charge effects and fluctuating voltages, leading to unstable depletion layer spreading and increased likelihood of avalanche breakdown.
Innovation Solution
The semiconductor device incorporates p−-type ring-shaped regions with higher p-type impurity concentrations and a semi-insulating layer configuration, where conductive layers are separated from the ring-shaped regions by an insulating layer, reducing the impact of external charges and stabilizing depletion layer spreading, and forming p-type channels as limiting resistances.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor structure is used, then manufacturing is simpler, but breakdown voltage stability deteriorates due to external charge effects
Solution Approach 1:
The semiconductor structure is segmented into multiple functional regions: a first semiconductor region with first conductivity type, a second semiconductor region with second conductivity type, and a third semiconductor region with first conductivity type surrounding the second region. This segmentation allows each region to perform specific functions in managing external charge effects and controlling depletion layer spreading, thereby improving breakdown voltage stability without requiring a complete structural overhaul.
Solution Approach 2:
Different regions of the semiconductor structure are assigned different impurity concentrations and conductivity types to create local quality variations. The third semiconductor region has a higher impurity concentration of the first conductivity type compared to the first semiconductor region, creating localized electrical properties that stabilize depletion layer spreading and reduce sensitivity to external charge effects in critical areas.
2Reliability
If impurity concentration in third semiconductor region is increased, then depletion layer spreading stability improves, but manufacturing precision requirements increase
Solution Approach 1:
The invention changes the impurity concentration parameter in the third semiconductor region to be higher than in the first semiconductor region. This parameter change creates a more robust depletion layer spreading characteristic that is less sensitive to external charge effects. By adjusting this key parameter, the structure achieves improved stability while the impurity concentration gradient provides a built-in reference that can guide manufacturing processes.
Solution Approach 2:
The semiconductor structure is designed with predetermined impurity concentration distributions and conductivity type assignments in each region before operation. The third semiconductor region is pre-configured with higher impurity concentration to proactively establish stable depletion layer spreading characteristics, preventing instability issues before they occur during device operation rather than attempting to correct them later.
3Reliability
If conductive layers are separated from ring-shaped regions by insulating layer, then external charge impact is reduced, but junction capacitance charging time increases
Solution Approach 1:
An insulating layer is introduced as an intermediary between the conductive layers and the first and second ring-shaped regions. This intermediary layer electrically isolates the conductive layers from the semiconductor regions, preventing external charge effects from directly impacting the depletion layer spreading. The insulating layer acts as a buffer that blocks harmful electrical influences while allowing the structure to maintain its functional performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the breakdown voltage stability, reduces the time for junction capacitance charging, and improves avalanche resistance, thereby increasing the overall reliability of the semiconductor device.
Implementation Method 1
stabilizing depletion layer spreading
Implementation Method 2
increased the likelihood of avalanche breakdown
Implementation Method 3
external charge effects and fluctuating voltages
Data Source
AI summary
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a first ring-shaped region, a second ring-shaped region, a second electrode, a third electrode, a first conductive layer, and a semi-insulating layer. The first ring-shaped region surrounds the second semiconductor region, and is provided between the second and third semiconductor regions. The second ring-shaped region surrounds the first ring-shaped region, and is provided between the first ring-shaped region and the third semiconductor region. The first conductive layer surrounds the second electrode, and is provided on the first ring-shaped region, the second ring-shaped region, and a first region of the first semiconductor region with an insulating layer interposed. The first region is positioned between the first and second ring-shaped regions. The semi-insulating layer contacts the second electrode, the first conductive layer, and the third electrode.