Semiconductor Device With Segmented Fin Patterns And Deep Trench Isolation
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Solution Overview
Problem
The miniaturization of semiconductor patterns is limited by the resolution limit in photolithography, making it challenging to integrate highly integrated semiconductor elements with fine pitch patterns.
Innovation Solution
A semiconductor device design featuring a substrate with distinct regions, including a SRAM cell region, peripheral circuit region, and a buffer region, with specific gate structures and insulating structures that allow for the alignment and separation of fin-type patterns, enabling efficient chip area utilization and transistor drive characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography is used to form patterns, then manufacturing process is simple, but pattern resolution is limited and fine pitch patterns cannot be formed
Solution Approach 1:
The substrate is divided into multiple regions (first region with first fin type patterns, second region with second fin type patterns, and buffer region) separated by deep trenches. This segmentation allows different pitch patterns to be formed in different regions while using the same photolithography process, resolving the contradiction between maintaining simple manufacturing and achieving fine pitch patterns.
Solution Approach 2:
Different fin type patterns with different pitches are formed in different regions of the substrate. The first fin type patterns have a first pitch in the first region, while the second fin type patterns have a second pitch in the second region. This local differentiation allows each region to be optimized for its specific requirements while using uniform manufacturing processes.
2Reliability
If buffer region is enlarged to separate cell and peripheral areas, then transistor drive characteristics are maintained, but chip area overhead increases
Solution Approach 1:
The buffer region is extended in the vertical dimension by forming deep trenches that penetrate through the substrate thickness. This vertical separation allows the buffer region to effectively isolate the first and second regions without requiring excessive horizontal space, thus maintaining transistor drive characteristics while minimizing chip area overhead.
Solution Approach 2:
The buffer region acts as an intermediary structure between the first region and the second region. By forming deep trenches filled with insulating material in the buffer region, electrical isolation is achieved between the cell area and peripheral area, maintaining proper transistor drive characteristics while using minimal space.
3Manufacturing precision
If deep trenches are formed to separate regions, then region isolation is achieved, but manufacturing process complexity increases
Solution Approach 1:
The deep trenches serve multiple functions: they separate the first and second regions, provide mechanical support, and act as isolation structures. By combining multiple functions into a single structural feature, the manufacturing process complexity is reduced compared to implementing separate structures for each function.
Solution Approach 2:
The formation of deep trenches is combined with the formation of fin type patterns and gate structures in a integrated manufacturing process. The deep trenches are formed, then fin patterns are created on the exposed substrate surfaces, and gate structures are formed spanning across the trenches. This merging of steps reduces overall process complexity.
Data Source
AI summary
A semiconductor device includes a substrate with a buffer region between first and second regions, the first region being a SRAM cell region, and the second region being a peripheral circuit region, first gate structures in a first direction on the first region and being spaced apart from each other in a second direction, second gate structures in the first direction on the second region and being spaced apart from each other in the second direction, the first and second gate structures being aligned with each other, a first insulating structure in the second direction on the buffer region between the first and the second regions along an entire length of each of the first and second regions in the second direction, and a second insulating structure on the first region and in contact with a part of the plurality of first gate structures.