Semiconductor Deposition Heating for Selective Thin-Film Growth
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Solution Overview
Problem
The challenge of forming thin films on semiconductor substrates with large aspect ratios, particularly in semiconductor elements like DRAM, is exacerbated by the need for atomic layer deposition techniques that require etching and cleaning due to low material-specific selectivity, leading to inefficiencies in the fabrication process.
Innovation Solution
The use of fabricating equipment with a first heater to uniformly heat the substrate and a second heater to differentially heat films of different materials based on their dielectric loss values at specific frequencies, enabling temperature-dependent selective deposition of layers on the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If atomic layer deposition is used to form thin films on substrates with large aspect ratios, then film formation capability is improved, but additional etching and cleaning processes are required due to low material-specific selectivity
Solution Approach 1:
The invention changes the temperature parameter by selectively heating different regions of the substrate to different temperatures. By controlling the temperature distribution across the substrate, the invention achieves material-specific selectivity without requiring additional etching and cleaning processes, thus improving fabrication process efficiency while maintaining film formation capability
Solution Approach 2:
The invention applies local quality by creating spatially varying temperature conditions on the substrate surface. Different regions of the substrate are heated to different temperatures, allowing selective deposition on specific areas or features, thereby achieving material-specific selectivity and eliminating the need for subsequent etching and cleaning steps
2Stability of the object's composition
If conventional heating methods are used, then uniform heating is achieved, but selective heating of different materials is not possible
Solution Approach 1:
The invention replaces uniform heating with localized heating by positioning the heat source to selectively heat specific regions or materials on the substrate. This local quality approach enables different materials to experience different temperature conditions, achieving material-specific selectivity while maintaining controlled heating stability
Solution Approach 2:
The invention introduces dynamic control of heating by adjusting the position, intensity, or timing of the heat source to selectively heat different materials or regions. This dynamic approach allows the system to adapt heating conditions to achieve material-specific selectivity while maintaining overall process stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for efficient and selective deposition of thin films on semiconductor substrates, improving the fabrication process by selectively heating films of different materials to varying temperatures, thereby enhancing the efficiency and precision of semiconductor device manufacturing.
Implementation Method 1
a second heater which generates waves, which when propagated toward the substrate, and differentially heat the first film of the first substrate and the second film of the first substrate
Data Source
AI summary
A fabricating equipment and method for a semiconductor device is provided. The fabricating equipment comprises a process chamber including an internal space, a substrate support which supports a substrate including a first film and a second film, inside the internal space, a nozzle which is placed on the substrate support and supplies a process gas, a first heater which is placed inside the substrate support and heats the substrate and a second heater which generates one of waves of a first frequency and waves of a second frequency to differentially heat the first film and the second film.