Semiconductor Self-Write Circuit Internal Data Copying
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in performing self-write operations efficiently, requiring external data and leading to increased power consumption and reduced operation speed.
Innovation Solution
A semiconductor device comprising a read/write control circuit, core circuit, and data conversion circuit that generates read and write strobe signals and addresses internally, allowing for self-write operations by copying and storing data within the device, eliminating the need for external data during the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If external data is used for self-write operations, then data can be copied into banks, but operation speed decreases and power consumption increases
Solution Approach 1:
The semiconductor device performs self-write operations by internally generating read strobe signals, write strobe signals, and write addresses without requiring external data input. The read/write control circuit generates these control signals internally, and the data conversion circuit processes data within the device, enabling the system to serve itself and eliminate dependencies on external data sources during the write operation.
Solution Approach 2:
The read/write control circuit generates the read strobe signal and read address before the actual write operation occurs. By preparing the read signal and address in advance, the device can efficiently perform the internal read operation and subsequently generate the write strobe signal and write address without external intervention, thereby improving operation speed and reducing power consumption.
2Productivity
If external data is required for self-write operations, then data copying can be performed, but operation speed is reduced
Solution Approach 1:
The read/write control circuit is designed to perform multiple functions: generating read strobe signals, generating write strobe signals, generating read addresses, and generating write addresses. This multi-functional design allows the same circuit to handle both read and write operations internally, reducing the need for separate control mechanisms and simplifying the overall device architecture while maintaining high operation speed.
Solution Approach 2:
The patent combines the generation of read strobe signals and write strobe signals within the same read/write control circuit. By merging these control signal generation functions, the device eliminates the need for separate external control signals and reduces the complexity of internal control mechanisms, thereby improving operation speed.
3Productivity
If internal read and write operations are performed sequentially, then self-write operation is enabled, but operation time increases
Solution Approach 1:
The read/write control circuit continuously generates control signals without interruption. The read strobe signal is generated first, followed immediately by the write strobe signal generation. This continuous generation of control signals ensures that the internal read and write operations can proceed seamlessly without idle time, thereby reducing the overall operation time while maintaining self-write functionality.
Solution Approach 2:
The read strobe signal and read address are generated in advance before the write operation begins. By preparing these signals beforehand, the device can execute the internal read operation and subsequently generate the write strobe signal and write address without waiting for external inputs, thereby reducing the time loss between sequential operations.
Data Source
AI summary
A semiconductor device includes a read/write control circuit, a core circuit, and a data conversion circuit. The read/write control circuit generates a read strobe signal and a read address from an internal address/command signal based on an internal read command during a self-write operation, generates a write strobe signal after the read strobe signal is generated, and generates a write address from the internal address/command signal. The core circuit is synchronized with the read strobe signal to output read data stored in a bank selected by the read address and is synchronized with the write strobe signal to store write data into the bank or another bank which is selected by the write address. The data conversion circuit changes a pattern of the read data to generate the write data.