Semiconductor Device Side Surface Conductor Face-Down Mounting
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Solution Overview
Problem
Conventional semiconductor devices face challenges in miniaturization due to high electric resistance and vulnerability to mechanical forces, especially when attempting face-down mounting, as they rely on limited upper surface layouts and exposed side surfaces for electrical connections.
Innovation Solution
The semiconductor device incorporates a semiconductor layer with a first and second conductor film on the upper and side surfaces, respectively, covered by a protective film with openings for external terminals, enhancing mechanical strength and reducing electric resistance by allowing face-down mounting without connection defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional die bonding and wire bonding are used for electric connection, then reliable electrical connection is achieved, but device miniaturization is hindered
Solution Approach 1:
The patent transitions from conventional planar bonding (die bonding and wire bonding) to a vertical connection architecture where conductor films are formed on the side surface of the semiconductor element. This dimensional change allows electrical connections to be made from the side rather than requiring complex wire bonds, enabling device miniaturization while maintaining connection reliability
Solution Approach 2:
The patent extracts and eliminates the need for separate wire bonding and die bonding processes by integrating the electrical connection function directly into the semiconductor element structure through side surface conductor films. This removes the external wiring complexity while preserving the essential electrical connection function
2Reliability
If side surface electrode is formed to improve characteristics and integration, then electric resistance is reduced, but mechanical strength is compromised
Solution Approach 1:
The patent merges the side surface electrode structure with the semiconductor element itself, forming the conductor film directly on the side surface rather than as a separate attached component. This integration ensures that the electrode and semiconductor element move together as a unified structure, preventing relative displacement while maintaining low electrical resistance
Solution Approach 2:
The conductor film is formed on the side surface during the semiconductor element fabrication process itself, before the element is packaged or mounted. This preliminary formation ensures the electrode is firmly integrated into the element structure from the outset, providing both electrical performance and mechanical integrity
3Productivity
If face-down mounting is attempted with conventional structures, then mounting density is improved, but connection defects occur due to exposed side surfaces
Solution Approach 1:
The patent inverts the conventional mounting approach by forming the electrical connection interface on the side surface rather than the top or bottom surfaces. This allows the semiconductor element to be mounted face-down with the side surface electrodes making contact with the substrate, achieving high mounting density while ensuring reliable connections without exposure-related defects
Data Source
AI summary
A semiconductor device includes a semiconductor layer, a first conductor film, a second conductor film, and a first protective film. The semiconductor layer has a semiconductor element. The first conductor film is formed on an upper surface of the semiconductor layer and is electrically connected to the semiconductor element. The second conductor film is formed on an outer side surface of the semiconductor layer and is electrically connected to the semiconductor element. The first protective film is formed on the first conductor film and has an opening to expose the first conductor film. A height from the upper surface of the semiconductor layer to an upper surface of the second conductor film is equal to or smaller than a height from the upper surface of the semiconductor layer to an upper surface of the first conductor film.