Thyristor TRIZ Cases

An amorphous C12A7 electride layer injects electrons into organic light emitting devices with high conductivity.

A Zener diode uses a segmented drift region with lower impurity concentration to extend the depletion layer and achieve high reverse breakdown voltage.

Segmented diode and IGCT cells spread heat laterally to prevent overheating while maintaining compact integration on a single wafer.

Deep diffused p+ and n+ regions reinforce thin wafers, reducing breakage risk while maintaining low leakage current and high detection speed.

Profiled contact edges reduce electric field spikes at electrode boundaries, preventing premature breakdown in high voltage semiconductor devices.

An insulated annular groove and heavily doped P-type wall prevent thermal expansion mismatch breakdowns in high voltage devices.

Subsidiary p pillars balance charge quantities in superjunction semiconductor edge regions to eliminate surplus charges and improve breakdown characteristics.

A location displacement detection unit measures electrical conduction between segmented electrode pads and device electrodes to verify alignment accuracy.

Vertical tunnel transistor structure overcomes low ON current and leakage by expanding band-to-band tunneling area through segmented gate design.

A dummy cell structure absorbs avalanche energy to prevent parasitic bipolar activation in power semiconductor devices.