Semiconductor Light Emitting Device Side Electrode Separation Area
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Solution Overview
Problem
Semiconductor light emitting devices face issues with current leakage and breakdown due to thermal expansion, especially when using Ag or Al electrodes, which migrate through cracks and chips in the insulator film, leading to reduced light extraction efficiency.
Innovation Solution
The semiconductor light emitting device incorporates a second conductivity-type side electrode separated from the insulator film by a metal or alloy material separation area, preventing electrode migration and ensuring effective light reflection for enhanced light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If heat treatment is conducted at high temperature for bonding, then adhesion is improved, but cracks and chips are produced on the insulator film
Solution Approach 1:
A separation area is introduced as an intermediary space between the electrode and the insulator film. This separation area prevents direct thermal stress transmission from the electrode to the insulator film during high-temperature bonding processes, allowing strong adhesion to be achieved without producing cracks or chips in the insulator film.
2Illumination intensity
If Ag or Al is used for electrode to increase light extraction efficiency, then light extraction efficiency is improved, but electrode migration through cracks causes leakage and breakdown
Solution Approach 1:
The separation area acts as an intermediary protective layer that prevents Ag or Al electrode materials from migrating through cracks in the insulator film. This maintains the benefits of using Ag or Al for high light extraction efficiency while preventing the harmful migration that would cause leakage and breakdown.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration prevents electrode migration and breakdowns, maintaining device integrity and improving light extraction efficiency by effectively reflecting emitted light, even when using Ag or Al electrodes.
Implementation Method 1
cracks and chips which may be caused by thermal expansion are produced on an insulator film such as SiO2 as the temperature becomes higher
Implementation Method 2
the electrode is made of, for example, Ag or Al for increasing light extraction efficiency by reflecting a light emitted from the semiconductor light emitting portion
Data Source
AI summary
A method for fabricating a semiconductor light emitting device is provided. The method includes forming a semiconductor light emitting portion including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and a light emitting layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The method also includes forming a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; forming a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer; and forming an insulator film covering the semiconductor light emitting portion, such that a first portion of the insulator film is surrounded by the second conductivity-type semiconductor side electrode and is separated from the second conductivity-type semiconductor side electrode by a separation area.