Semiconductor Device With Hydrogen-Controlled Silicon Nitride Passivation

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Solution Overview

Problem

Metal-oxide semiconductor devices suffer from instability and unreliability due to sensitivity issues, which affects their stability and performance in semiconductor applications.

Innovation Solution

A semiconductor device structure is developed with a substrate, gate electrode, insulating layer, source and drain electrodes, semiconductor channel layer, and passivation layers, including a silicon nitride layer with a specific hydrogen concentration range (2.0×10^22 to 3.11×10^22 atom/cm^3) and a channel protective layer, enhancing stability and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If metal-oxide semiconductor materials are used to achieve high carrier mobility and simpler manufacturing, then manufacturing complexity is reduced and electrical performance is improved, but stability and reliability deteriorate due to sensitivity and instability of the materials

Engineering Contradiction:

Improvemanufacturing simplicityVSAvoiddevice stability

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

A silicon nitride passivation layer is introduced as an intermediary between the metal-oxide semiconductor channel layer and the environment. This layer acts as a mediator that selectively interacts with hydrogen atoms, absorbing excess hydrogen while maintaining the electrical performance benefits of metal-oxide semiconductors. The silicon nitride layer serves as a buffer that protects the sensitive semiconductor material without requiring complex manufacturing changes.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The hydrogen concentration in the silicon nitride passivation layer is precisely controlled within the range of 2.0×10^22 to 3.11×10^22 atoms/cm³. By changing this critical parameter, the passivation layer achieves optimal hydrogen absorption capacity to stabilize the semiconductor device while maintaining compatibility with existing manufacturing processes.

Inventive Principle:

Principle #35Parameter changes

2Reliability

If metal-oxide semiconductor materials are used to achieve better electrical performance compared to amorphous silicon TFTs, then electrical performance is improved, but stability and reliability deteriorate due to material sensitivity

Engineering Contradiction:

Improveelectrical performanceVSAvoidmaterial stability

Core Design Contradiction:

ReliabilityVSStability of the object's composition

Solution Approach 1:

The silicon nitride passivation layer serves as a protective intermediary that shields the metal-oxide semiconductor channel layer from environmental factors and hydrogen contamination. This mediator maintains the electrical performance advantages of metal-oxide semiconductors while providing the stability that the inherently sensitive materials lack.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The device structure combines metal-oxide semiconductor materials with silicon nitride passivation layers to create a composite structure. This composite approach leverages the high carrier mobility of metal-oxide semiconductors while using the stable silicon nitride layer to provide environmental stability and compositional consistency.

Inventive Principle:

Principle #40Composite materials

3Reliability

If conventional passivation structures are used without controlled hydrogen concentration, then manufacturing is simpler, but threshold voltage stability deteriorates under high humidity and high temperature conditions

Engineering Contradiction:

Improvethreshold voltage stabilityVSAvoidpassivation layer complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The device exhibits improved reliability and maintains threshold voltage stability under high humidity and high temperature conditions for 300 hours, making it suitable for practical electronic applications.

Implementation Method 1

the hydrogen concentration of the second passivation layer is about 2.0×10^22 atom/cm³ to about 3.11×10^22 atom/cm³

Methodology Applied

Scientific EffectHydrogen diffusion: Diffusion

Data Source

PatentUS9153601B2Semiconductor device

Publication Date: 2015.10.06 AU OPTRONICS CORP

AI summary

A semiconductor device includes a substrate, a gate electrode, an insulating layer, a source electrode, a drain electrode, a semiconductor channel layer, a first passivation layer and a second passivation layer. The gate is formed on the substrate. The insulating layer covers the gate electrode. The source electrode and the drain electrode are positioned on the insulating layer. The semiconductor channel layer is disposed on the insulating layer, and connects the source electrode and the drain electrode. The first passivation layer covers the source electrode, the drain electrode and the semiconductor channel layer. The first passivation layer includes silicon oxide. The second passivation layer is disposed on the first passivation layer. The second passivation layer includes silicon nitride that has a hydrogen concentration of about 2.0×1022 atom/cm3 to about 3.11×1022 atom/cm3.