Semiconductor Surface Silylation for Fine Pattern Collapse Control
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Solution Overview
Problem
The existing surface treatment methods for semiconductor substrates lack manufacturing controllability and stability, particularly when evaluating the surface treatment of patterned regions with fine concave-convex structures, as they require separate evaluation using a dummy substrate, which complicates the process.
Innovation Solution
A surface treatment method that uses a silylating agent composition to treat both pattern formation and non-formation regions on a semiconductor substrate, where the contact angle with 2-propanol or pure water is measured in the non-formation region to evaluate the surface treatment effectiveness and control the pattern collapse rate, allowing for improved manufacturing control without the need for a separate dummy substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a separate dummy substrate is used to evaluate surface treatment, then measurement accuracy is improved, but device complexity and manufacturing process complexity increase
Solution Approach 1:
The patent combines the pattern formation region and pattern non-formation region on the same semiconductor substrate, eliminating the need for a separate dummy substrate. The surface treatment evaluation is performed by measuring the contact angle in the pattern non-formation region while the pattern collapse rate in the pattern formation region serves as the evaluation criterion, merging both evaluation functions into a single substrate.
Solution Approach 2:
The semiconductor substrate is designed to serve multiple functions simultaneously: it acts as both the device fabrication substrate and the surface treatment evaluation substrate. The pattern non-formation region provides a smooth surface for contact angle measurement, while the pattern formation region enables pattern collapse rate evaluation, making the same substrate universal for both purposes.
2Measurement precision
If contact angle measurement is performed on pattern formation region, then surface treatment evaluation is obtained, but pattern collapse occurs affecting measurement reliability
Solution Approach 1:
The substrate surface is segmented into two distinct regions: the pattern formation region with fine concave-convex structures for pattern collapse rate evaluation, and the pattern non-formation region with a smooth surface for contact angle measurement. This segmentation allows each region to serve its specific evaluation purpose without interfering with the other, ensuring both measurement types can be performed reliably on the same substrate.
3Manufacturing precision
If fine pattern with 30nm dimension is formed, then manufacturing precision is improved, but pattern collapse rate increases reducing manufacturing stability
Solution Approach 1:
The patent optimizes the contact angle parameters (IPA contact angle ≥2° and water contact angle ≥50°) through surface treatment to control the manufacturing stability. By adjusting the surface properties to achieve specific contact angle ranges, the patent stabilizes the pattern collapse rate even for fine patterns with 30nm dimensions, allowing high precision manufacturing while maintaining stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances manufacturing controllability and stability by stabilizing the pattern collapse rate in the pattern formation region through precise control of the contact angles, reducing the complexity of the manufacturing process and eliminating the need for separate dummy substrate evaluation.
Implementation Method 1
a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the pattern non-formation region
Implementation Method 2
an IPA contact angle with 2-propanol is 2° or more and/or a water contact angle with pure water is 50° or more
Data Source
AI summary
A surface treatment method for a semiconductor substrate of the present invention is a treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a pattern non-formation region in which no pattern is formed, the method including a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the pattern non-formation region on the main surface of the semiconductor substrate, in which, with respect to a surface of the pattern non-formation region after the surface treatment step, an IPA contact angle with 2-propanol is 2° or more at a room temperature of 25° C. and/or a water contact angle with pure water is 50° or more at the room temperature of 25° C.