Semiconductor Bonding Structure With Sintered Metal Heat Path
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Solution Overview
Problem
Semiconductor devices face challenges in managing heat generation as current capacity increases, leading to potential overheating of semiconductor elements.
Innovation Solution
The semiconductor device incorporates a sintered metal bonding layer between the semiconductor element and the lead, combined with a conductive member such as a metal clip or bonding wire, to enhance thermal conductivity and improve heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the current capacity of the semiconductor device is increased, then the current handling capability is improved, but heat generation increases causing the semiconductor element to become excessively hot
Solution Approach 1:
A metal plate is introduced as an intermediary thermal conduction component between the semiconductor element and the lead. The metal plate has high thermal conductivity and serves as a heat transfer medium, conducting heat away from the semiconductor element through thermal conduction to prevent excessive temperature rise while maintaining high current capacity
Solution Approach 2:
The thermal conductivity parameter of the bonding structure is enhanced by using a metal plate with specifically high thermal conductivity between the semiconductor element and lead. This parameter change enables efficient heat dissipation path while maintaining electrical connection, resolving the contradiction between current capacity and temperature control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows the device to efficiently conduct heat away from the semiconductor element, maintaining high current capacity while improving heat dissipation and reliability.
Implementation Method 1
a first bonding layer interposed between the base portion and the second electrode, and bonded to the base portion and the second electrode... the first bonding layer includes a sintered metal
Data Source
AI summary
A semiconductor device includes a first lead including a base portion, a semiconductor element mounted on one side in a thickness direction of the base portion and having a first electrode disposed on the one side in the thickness direction and a second electrode disposed on the other side in the thickness direction, a second lead spaced apart from the base portion in a first direction orthogonal to the thickness direction, a first conductive member including a first portion bonded to the first electrode and a second portion bonded to the second lead and electrically connected to the first electrode and the second lead, a first bonding layer interposed between, and bonded to the base portion and the second electrode, and a second bonding layer interposed between, and bonded to the first electrode and the first portion. The first bonding layer includes a sintered metal.