Semiconductor Device With Slit Resistive Bodies
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Solution Overview
Problem
Existing semiconductor devices with thin-film resistors in high-frequency signal transmission lines are prone to burnout when excessive high-frequency signals are inputted, and they often fail to achieve the desired resistance value due to limitations in resistor width.
Innovation Solution
A semiconductor device design featuring a package with an input matching circuit substrate that includes multiple resistive bodies with slits, allowing high-frequency signals to pass through both the resistive bodies and the transmission line patterns in the slits, reducing Joule heat and preventing resistor burnout while maintaining stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a thin-film resistor is disposed in series on a main line of an MIC substrate to reduce oscillation, then the stability of the semiconductor device is improved, but the resistor is burned out when an excessive high-frequency signal is inputted
Solution Approach 1:
The single resistive body is divided into multiple segments by forming slits, creating a multi-segment resistive structure. This segmentation distributes the power dissipation across multiple regions, preventing localized overheating and burnout while maintaining the overall stabilizing function.
Solution Approach 2:
The slits are strategically positioned within the resistive body to create regions with different electrical characteristics. The transmission line pattern in the slits provides alternative current paths with different impedance characteristics, allowing local optimization of power distribution and heat dissipation.
2Measurement precision
If the width of the thin-film resistor is increased to achieve the desired resistance value, then the resistance value requirement is met, but the resistor is more prone to burnout due to excessive power dissipation
Solution Approach 1:
The resistive body is segmented into multiple sections by slits, allowing the total resistance to be achieved through the series combination of multiple smaller resistive segments. This avoids the need for a single wide resistor that would dissipate excessive power, while still achieving the required total resistance value.
Solution Approach 2:
The transmission line pattern in the slits acts as an intermediary structure that provides alternative current paths. This mediator allows current to bypass the most heavily loaded regions, distributing power dissipation more evenly and preventing burnout while maintaining the required resistance characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design stabilizes the operation of the semiconductor device by preventing resistor burnout and achieving the desired resistance value, ensuring high-frequency signal stability and reliability.
Implementation Method 1
reducing Joule heat and preventing resistor burnout
Data Source
AI summary
Two rows of resistive bodies, first resistive body and second resistive body, having slits are provided on an input matching circuit substrate. Since a high-frequency signal flows through not only the resistive bodies but also a transmission line pattern formed in the slits, the burnout of the resistive bodies can be prevented.