Semiconductor Spacer Formation With Dual-Plasma Adhesion Control
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Solution Overview
Problem
The interaction between deposition and etching steps in semiconductor manufacturing affects the performance of electronic devices, necessitating a method to improve the manufacturing process to enhance device performance.
Innovation Solution
A method involving the formation of a conductive structure in a first dielectric layer, followed by a second dielectric layer with a conductive contact, and subsequent plasma processes to create a spacer layer with improved adhesion using different plasma gases and controlled process times, resulting in a thicker spacer layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single plasma process is used to form the material layer, then the process is simple and fast, but the adhesion between the spacer layer and the underlying layer is insufficient
Solution Approach 1:
The plasma process is segmented into two distinct steps: a first plasma process using a non-oxygen containing gas to form a first material layer, and a second plasma process using oxygen containing gas to form a second material layer. This segmentation allows each plasma process to be optimized for specific adhesion requirements, with the oxygen-containing second plasma process specifically enhancing the adhesion between the spacer layer and the underlying structures.
Solution Approach 2:
The invention changes the chemical composition parameters of the plasma gas between two sequential processes. The first process uses non-oxygen containing gas while the second process uses oxygen containing gas, fundamentally altering the chemical environment to improve adhesion properties of the resulting spacer layer without requiring complex process equipment.
2Reliability
If the spacer layer is made thicker to improve adhesion, then the adhesion is enhanced, but the process time increases
Solution Approach 1:
By changing the plasma gas composition from non-oxygen containing to oxygen containing in the second process, the adhesion of the spacer layer is significantly improved. This parameter change allows for achieving the required adhesion with a controlled thickness, avoiding excessive process times while meeting performance requirements.
Solution Approach 2:
The spacer layer structure is formed as a composite of two different material layers deposited under different plasma conditions. The first material layer from non-oxygen plasma and the second material layer from oxygen plasma create a composite structure with superior adhesion properties compared to a single-layer spacer, achieving both adhesion enhancement and reasonable process time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The improved adhesion and thickness of the spacer layer enhance the electrical performance of the semiconductor structure.
Implementation Method 1
A first plasma process is performed to form a first material layer over the native oxide layer by using a first plasma gas
Implementation Method 2
A second plasma process is performed to form a second material layer over the first material layer by using a second plasma gas different from the first plasma gas
Data Source
AI summary
A method of forming a semiconductor structure includes forming a conductive structure in a first dielectric layer. A second dielectric layer is formed over the first dielectric layer. A conductive contact is formed in the second dielectric layer. The second dielectric layer is etched to form a recess on a top surface of the conductive structure. A native oxide layer is formed on a top surface and a sidewall of the second dielectric layer, the top surface of the conductive structure, and a sidewall of the conductive contact. A first plasma process is performed to form a first material layer over the native oxide layer by using a first plasma gas. A second plasma process is performed to form a second material layer over the first material layer by a second plasma gas different from the first plasma gas. A spacer layer is formed on the second material layer.