Semiconductor Device Spacer for Gate Cut Etching
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Solution Overview
Problem
The existing semiconductor devices face challenges in preventing excessive etching of the field insulating layer during the process of forming gate cuts, which affects the reliability and performance of the device.
Innovation Solution
The semiconductor device incorporates a spacer disposed below each gate structure and gate cut, along with a multi-layered interlayer insulating structure, to prevent excessive etching of the field insulating layer, thereby enhancing the reliability and stability of the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If gate cuts are formed by etching through the field insulating layer, then the gate structures can be properly isolated and formed, but the field insulating layer may be excessively etched out, compromising device reliability
Solution Approach 1:
The spacer is formed on the field insulating layer before the gate cut etching process. This preliminary formation of the spacer structure provides a protective barrier that prevents excessive etching of the field insulating layer during subsequent gate cut formation, thereby maintaining the integrity of the field insulating layer while still allowing proper gate structure isolation
Solution Approach 2:
The spacer acts as an intermediary protective layer between the etching process and the field insulating layer. By positioning the spacer between the etchant and the field insulating layer, it mediates the etching process to prevent direct excessive contact between the etchant and the field insulating layer, thus preserving the field insulating layer's integrity
Data Source
AI summary
A semiconductor device includes first and second active patterns each extending in a first direction and are spaced apart from each other in a second direction that is perpendicular to the first direction. A field insulating layer is disposed between the first active pattern and the second active pattern. A first gate structure is disposed on the first active pattern and extends in the second direction. An interlayer insulating layer is disposed between the first gate structure and the field insulating layer. The interlayer insulating layer includes a first part disposed below the first gate structure. A spacer is disposed between the first gate structure and the first part of the interlayer insulating layer.