Semiconductor Structure With Variable Spacers for Parasitic RC Tuning
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Solution Overview
Problem
The increasing density and reduced dimensions of semiconductor components make it challenging to adjust parasitic resistance and capacitance among devices with different metal dimensions, complicating the integration of various electronic components in integrated circuits.
Innovation Solution
The method involves forming semiconductor structures with varying spacer layer thicknesses and conductive feature widths in different regions of a substrate, allowing for controlled parasitic resistance and capacitance by thinning spacer layers and conductive features, enabling the formation of devices with specific electrical characteristics, such as transistors and capacitors, within the same substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the density of semiconductor components is increased and dimensions are reduced, then integration density is improved, but the ability to adjust parasitic resistance and capacitance among devices is worsened
Solution Approach 1:
The patent applies local quality by forming different insulation layer thicknesses in different regions of the semiconductor substrate. First regions have a first insulation layer thickness while second regions have a second insulation layer thickness, allowing each region to be optimized for specific device requirements. This enables independent control of parasitic resistance and capacitance in different areas while maintaining high overall integration density.
2Adaptability or versatility
If devices with different metal dimensions are integrated, then functionality is improved, but the compromise of parasitic resistance and capacitance among devices is worsened
Solution Approach 1:
Different insulation layer thicknesses are formed in different regions to accommodate devices with different metal dimensions. This allows each device type to have optimized parasitic characteristics while being fabricated in the same integrated structure, maintaining both functionality and manufacturing precision.
Solution Approach 2:
The patent changes the physical parameter of insulation layer thickness to control electrical characteristics. By varying the thickness parameter in different regions, the patent optimizes parasitic resistance and capacitance for different device types, enabling precise control of electrical properties across the integrated circuit.
Data Source
AI summary
A semiconductor structure includes a first semiconductor device formed over a substrate and a second semiconductor device formed over the substrate. The first semiconductor device includes a first source/drain feature over the substrate, a first gate structure over the substrate, a first conductive feature over the first source/drain feature, and a first insulation layer between the first gate structure and the first conductive feature. The second semiconductor device includes a second source/drain feature over the substrate, a second gate structure over the substrate, a second conductive feature over the second source/drain feature, and a second insulation layer between the second gate structure and the second conductive feature. A width of the first conductive feature and a width of the second conductive feature are different, and a width of the first insulation layer is less than a width of the second insulation layer.