Semiconductor Stack Insulation Segmentation for Conductive Layer Isolation
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Solution Overview
Problem
The existing three-dimensional nonvolatile memory devices face challenges in achieving improved operational reliability and manufacturing efficiency due to limitations in the integration of memory cells stacked on a substrate, particularly in separating and isolating conductive layers effectively.
Innovation Solution
The semiconductor device incorporates a unique stack structure with alternating conductive and insulating layers, including protrusion parts and slit insulating structures, to separate and isolate conductive layers, and a manufacturing method that forms specific insulating layers with protrusion patterns to enhance separation and reduce manufacturing complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are vertically stacked in multiple layers to improve integration density, then the degree of integration is improved, but the complexity of separating and isolating conductive layers increases
Solution Approach 1:
The insulating layer is segmented into multiple regions with different thicknesses (first thickness in first region, second thickness in second region). This segmentation allows different portions of the stack structure to be isolated with appropriate insulation levels, simplifying the overall isolation process while maintaining high integration density.
Solution Approach 2:
The insulating layer exhibits local quality variations through its non-uniform thickness distribution. The first region has a first thickness while the second region has a second thickness, allowing optimized isolation performance in different local areas of the device without requiring complex global isolation structures.
2Reliability
If conventional insulating structures are used to separate conductive layers, then manufacturing process is simpler, but operational reliability is reduced
Solution Approach 1:
The insulating layer is divided into regions with different thicknesses to provide enhanced isolation where needed. This segmented approach improves operational reliability by ensuring adequate electrical isolation between adjacent stack structures while maintaining a relatively simple manufacturing process that forms the insulating layer in a single step with controlled thickness variation.
Solution Approach 2:
The thickness parameter of the insulating layer is varied across different regions (first thickness vs. second thickness) to optimize both reliability and manufacturability. This parameter change allows the insulating layer to provide sufficient isolation for reliable operation while being formable through conventional manufacturing processes.
Data Source
AI summary
A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.