3D Semiconductor Stacked Structure Stress Management
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Solution Overview
Problem
The integration density of semiconductor devices is limited by stress differences between insulating and sacrificial films during the formation of 3D structures, leading to film destruction and reduced yield due to differences in thermal expansion coefficients.
Innovation Solution
A method is introduced to form a stacked structure by alternately stacking insulating and sacrificial films, where the sacrificial film is modified to approximate its stress to that of the insulating film, using gases like silicon containing gases and nitrogen containing gases, and modifying the films with argon plasma to break chemical bonds and reduce stress differences.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If insulating films and sacrificial films are alternately stacked to form a 3D structure, then integration density is improved, but stress difference between films causes film destruction
Solution Approach 1:
The patent modifies the stress parameters of the sacrificial film by subjecting it to plasma treatment or thermal processing, changing its physical properties to match the insulating film's stress characteristics. This parameter adjustment prevents stress-induced film destruction while maintaining the stacked structure's integration density benefits
Solution Approach 2:
The patent applies preliminary stress modification to the sacrificial film before stacking, using plasma treatment or annealing processes to pre-adjust the film's stress state. This preliminary anti-action counteracts the potential stress mismatch that would otherwise cause film destruction during subsequent processing
2Adaptability or versatility
If different materials are used for insulating and sacrificial films to achieve desired electrical properties, then device functionality is improved, but coefficient of thermal expansion difference increases stress
Solution Approach 1:
The patent changes the stress parameters of the sacrificial film through plasma treatment or thermal processing to compensate for the inherent stress differences caused by material selection. This allows different materials to be used for electrical functionality while the stress parameters are adjusted to match, reducing thermal expansion-related stress
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces stress differences between insulating and sacrificial films, preventing film peel-off and enhancing the yield and characteristics of semiconductor devices with 3D structures.
Implementation Method 1
modifying the films with argon plasma to break chemical bonds and reduce stress differences
Data Source
AI summary
The technique described herein can form a semiconductor device having a favorable characteristic over a flash memory with a 3D structure. Provided is a method of manufacturing a semiconductor device, including: (a) forming a stacked structure having an insulating film and a sacrificial film stacked therein by performing a combination a plurality of times, the combination including: (a-1) forming the insulating film on a substrate; (a-2) forming the sacrificial film on the insulating film; and (a-3) modifying at least one of the insulating film and the sacrificial film to reduce a difference between stresses of the insulating film and the sacrificial film.