Semiconductor Package Step Structure for EMI Shield Burr Control
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Solution Overview
Problem
The formation of electromagnetic shield material burrs on the outer edges of semiconductor packages during the manufacturing process, which can lead to electrical shorts and inefficiencies in electromagnetic interference (EMI) suppression.
Innovation Solution
A semiconductor device design featuring a step or trench on the outer edge of the substrate-side of the semiconductor package, which prevents the electromagnetic shield material from forming a continuous film and entering trenches between the package and the conveyance carrier, thereby suppressing burr formation and electrical shorts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If electromagnetic shield material is formed as a continuous film on the surfaces of semiconductor packages and the conveyance carrier, then electromagnetic shielding effectiveness is improved, but electromagnetic shield material burrs form on the outer edges of the semiconductor packages
Solution Approach 1:
The patent divides the outer edge region of the semiconductor package from the inner region by forming a step structure. This segmentation allows the electromagnetic shield material to be deposited differently on different surfaces - forming a continuous film on the top surface for EMI shielding while preventing material accumulation at the outer edges where the step structure creates a physical barrier, thus eliminating burr formation.
2Object-affected harmful factors
If electromagnetic shield material is formed on the surfaces of semiconductor packages, then electromagnetic shielding is achieved, but electrical shorts may occur due to burr formation
Solution Approach 1:
By segmenting the package surface into different levels using a step structure at the outer edges, the patent enables selective deposition of electromagnetic shield material. The material forms a continuous protective film on the top surface for EMI shielding while the step structure prevents material from reaching the outer edges, thereby eliminating the risk of electrical shorts without compromising shielding effectiveness.
3Object-affected harmful factors
If a continuous film of electromagnetic shield material is formed, then electromagnetic shielding effectiveness is improved, but the material enters trenches between the package and conveyance carrier
Solution Approach 1:
The step structure segments the deposition zones by creating a height difference at the outer edges. During electromagnetic shield material deposition, the material conforms to the top surface and forms a continuous film for effective shielding, while the step structure acts as a physical barrier that prevents material from flowing into the trenches between the package and conveyance carrier, ensuring precise deposition control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively suppresses the formation of electromagnetic shield material burrs and prevents electrical shorts, enhancing the reliability of semiconductor devices by controlling the deposition of the shield material during the manufacturing process.
Implementation Method 1
When electromagnetic shield material is formed on the surfaces of the semiconductor packages, the electromagnetic shield material is also formed on the surface of the conveyance carrier between every neighboring two of the plurality of semiconductor packages. That is, the electromagnetic shield material is formed as a continuous film on the surfaces of the semiconductor packages and the surface of the conveyance carrier.
Data Source
AI summary
According to one embodiment, a semiconductor device includes a substrate. A semiconductor chip is disposed on a first surface of the substrate. The semiconductor chip is covered with a sealing material. A front surface and a side surface of the sealing material are covered with a conductive film. On an outer edge of a substrate-side of the semiconductor device, a step or a trench is formed.