Semiconductor Storage Device Stacked Body Columnar Ferroelectric Memory Integration
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Solution Overview
Problem
Current semiconductor storage devices face challenges in achieving high integration due to limitations in the arrangement density and operational efficiency of memory cells, particularly in ferroelectric memory systems where data storage relies on ferroelectric materials.
Innovation Solution
A semiconductor storage device is designed with a stacked body and columnar body configuration, featuring alternately stacked conductive and insulating layers, where the columnar body includes a ferroelectric film and semiconductor film, forming a three-dimensional memory cell array at intersections, enabling high integration and efficient data storage operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are arranged in a conventional planar configuration, then the device structure is simple, but the arrangement density and integration level are limited
Solution Approach 1:
The patent transitions from a conventional planar two-dimensional memory cell arrangement to a three-dimensional stacked configuration. Multiple conductive layers are stacked vertically with insulating layers in between, forming a stacked body that intersects with columnar bodies to create memory cells in three dimensions. This dimensional change dramatically increases the arrangement density of memory cells within the same footprint area.
Solution Approach 2:
The patent implements a nested structure where columnar bodies (containing ferroelectric films and semiconductor films) are positioned within and intersect the stacked body (comprising alternating conductive and insulating layers). The memory cells are formed at the intersections, effectively nesting multiple functional components within each other to achieve high integration.
2Quantity of substance
If a three-dimensional stacked structure with columnar bodies is implemented, then the arrangement density of memory cells is enhanced, but the manufacturing process becomes more complex
Solution Approach 1:
The manufacturing process is segmented into distinct sequential steps: first forming the stacked body with alternating conductive and insulating layers, then forming the columnar bodies with semiconductor and ferroelectric films, and finally creating memory cells at the intersections. This segmentation of the complex fabrication process into manageable stages improves ease of manufacture while achieving high integration.
3Reliability
If ferroelectric material is used for data storage, then nonvolatile memory is achieved, but the control over write and read operations becomes more challenging
Solution Approach 1:
The patent introduces peripheral circuits as intermediary components that manage and control the voltage applied to the ferroelectric memory cells during write and read operations. These peripheral circuits generate and regulate the specific voltage levels required for ferroelectric switching, simplifying the overall control mechanism while maintaining reliable nonvolatile data storage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the arrangement density of memory cells, allowing for high integration and efficient data storage and retrieval operations, with improved control over write and read operations through the use of the peripheral circuit's voltage management.
Implementation Method 1
data is stored by turning off a transistor of a selected memory cell and accumulating charges in the ferroelectric material
Data Source
AI summary
A semiconductor storage device includes a stacked body and a columnar body. The stacked body includes a plurality of conductive layers spaced apart from each other in a stacking direction. The columnar body penetrates the stacked body in the stacking direction. The columnar body includes a columnar ferroelectric film, a semiconductor film disposed between the ferroelectric film and the conductive layers, and an insulating film disposed between the semiconductor film and the conductive layers.