Semiconductor Storage Device Temperature Sensor Read Setup Time
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Solution Overview
Problem
Current semiconductor storage devices face challenges in increasing the speed of read operations while maintaining accuracy, particularly in low latency NAND flash memories, where the time taken to obtain a temperature code is several microseconds, leading to delays in data read operations.
Innovation Solution
The semiconductor storage device incorporates a temperature sensor with separate oscillators that generate a temperature code during both ready and busy states, allowing for periodic updates and immediate voltage adjustments, thereby reducing read setup time and enhancing operational speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the temperature code is obtained during the busy state only, then the device complexity is reduced, but the read operation time increases due to delayed voltage adjustments
Solution Approach 1:
The temperature sensor performs temperature code acquisition and voltage adjustment preparation during the ready state, before the actual read operation begins. This preliminary action allows the voltage to be ready for immediate application when the busy state starts, eliminating the delay that would otherwise occur during the read operation itself.
Solution Approach 2:
The temperature sensing operation is divided into distinct phases: temperature code acquisition during the ready state, and voltage adjustment during the busy state. This segmentation allows each function to be optimized independently and avoids conflict between temperature measurement and data read operations.
2Speed
If the voltage is adjusted immediately based on temperature code, then the read speed is improved, but the current consumption increases
Solution Approach 1:
The voltage adjustment is performed periodically based on the read operation cycle rather than continuously. The voltage is adjusted to the appropriate level during the busy state and maintained throughout the read operation, avoiding the need for continuous adjustment and reducing overall current consumption while maintaining fast read speeds.
Solution Approach 2:
The voltage adjustment is prepared in advance during the ready state based on the temperature code, so that when the read operation begins, the voltage is already at the correct level. This eliminates the need for time-consuming voltage adjustments during the actual read operation, improving speed without requiring excessive current.
3Measurement precision
If the temperature sensor operates continuously to maintain accurate temperature codes, then the measurement precision is improved, but the current consumption increases
Solution Approach 1:
The temperature sensor operates periodically during the ready state to acquire temperature codes, rather than continuously. This periodic operation maintains sufficient measurement precision by updating the temperature code before each read operation, while significantly reducing current consumption by keeping the sensor inactive during busy states and other periods.
Solution Approach 2:
The temperature sensor is activated only when needed for the read operation, utilizing the existing ready state period. The sensor serves itself by automatically acquiring the temperature code and enabling the voltage adjustment mechanism without requiring continuous external control, thus maintaining precision efficiently.
Data Source
AI summary
A semiconductor storage device includes a memory cell array, a temperature sensor configured to generate a first temperature signal corresponding to a temperature of the memory cell array in response to a first command periodically generated during a waiting period of the memory cell array, a storage circuit configured to store the first temperature signal and update the first temperature signal each time the first command is generated during the waiting period, and a voltage generation circuit configured to generate a voltage to be applied to the memory cell array based on the first temperature signal stored in the storage circuit.