A segmented resistor divider with multiplexer switching linearizes nonlinear temperature sensor output while limiting area and power.
A ratio of temperature-linked input and inverse reference voltages improves sensor accuracy while keeping A/D readout compatible with multi-sensor systems.
Different MSB and LSB determination periods speed A/D conversion while preserving accuracy for stable temperature-compensated oscillators.
Single-temperature trimming uses PTAT and CTAT currents with BIST to offset MOSFET subthreshold factor variation and improve sensor accuracy.
A resistor ladder, analog multiplexer, and comparator convert non-linear diode voltages into a linear temperature word for accurate IC sensing.
Time-division voltage-frequency conversion measures chip temperature precisely with one converter, reducing sensor area and ADC complexity.
Time-division counting converts temperature-dependent voltages into precise digital readings while keeping the sensor area compact.
Cumulative high-temperature time stored in on-chip non-volatile memory lets the IC predict wear-out and warn before failure.
A switched-capacitor reference and Sigma-Delta readout cut 1/f noise, area, and power in MEMS temperature sensing.
A delta-sigma current-sequencing scheme cancels series resistance and offset errors in remote BJT temperature sensing while cutting area and power.
A supply-based ADC reference enables ratiometric thermistor measurement, canceling voltage variation errors without calibration.
A switched-capacitor thermistor readout uses Sigma-Delta modulation and chopping to keep high-rate temperature sensing low noise and low power.