Semiconductor Temperature Sensing via Time-Division Frequency Conversion
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Solution Overview
Problem
Existing semiconductor devices face challenges in miniaturizing temperature sensors while maintaining precision, leading to increased occupation area and higher costs due to larger sensor sizes.
Innovation Solution
A semiconductor device design that utilizes a time division method to convert temperature-dependent and independent voltages into frequencies, allowing for improved precision without increasing the sensor's occupation area by using a single voltage-frequency converting circuit and dual counters to generate digital information from these signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the area occupied by the temperature sensor is increased to improve measurement precision, then the precision is improved, but the occupation area increases leading to larger chip size and higher cost
Solution Approach 1:
The patent applies periodic action by using time-division multiplexing where the voltage-frequency converting circuit alternates between converting the first voltage (temperature-dependent) and the second voltage (temperature-independent) at different time periods. This allows sequential measurement of both voltages using the same hardware resources, achieving high-precision temperature measurement without requiring additional circuit components that would increase occupation area
Solution Approach 2:
The patent implements universality by designing a single voltage-frequency converting circuit that serves multiple functions: it converts both the temperature-dependent first voltage and the temperature-independent second voltage into frequency signals. This multi-functional approach eliminates the need for separate converting circuits, thereby reducing occupation area while maintaining measurement precision through dual-voltage comparison
2Measurement precision
If the resolution of the temperature sensor is improved by using more bits in digital information, then the precision is improved, but the device complexity increases
Solution Approach 1:
The patent replaces complex analog/digital converting mechanisms with a frequency-based measurement approach. By converting voltages to frequency signals and using counter circuits to measure frequencies, the system achieves high-resolution temperature measurement through time-based counting rather than complex analog-to-digital conversion, thereby reducing circuit complexity while improving precision
Solution Approach 2:
The patent changes the measurement parameter from direct voltage comparison to frequency measurement. By converting the temperature-dependent voltage and temperature-independent voltage into frequency signals and measuring their ratio through counting, the system achieves high precision temperature measurement with simpler digital circuitry, avoiding the complexity of high-resolution ADC while maintaining or improving measurement accuracy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise temperature measurement with reduced sensor size, enhancing the semiconductor device's performance while minimizing the increase in occupation area, thus lowering costs and improving operational stability.
Implementation Method 1
a voltage-frequency converting circuit converting the first voltage and the second voltage into a first signal having a frequency corresponding to the first voltage and a second signal having a frequency corresponding to the second voltage
Data Source
AI summary
A method of sensing a temperature of a semiconductor device, includes: measuring, by a time measuring circuit, time until a count value, which is obtained from a counter by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted by the counter; and obtaining, by the counter, a piece of digital information corresponding to the first voltage based on a count value obtained by counting a second signal having a frequency corresponding to a second voltage, which is different from the first voltage, based on the time measured by the time measuring circuit, the first voltage depending upon the temperature of the semiconductor device.