Semiconductor Storage Voltage Adjusting Circuit
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Solution Overview
Problem
Conventional high voltage regulator circuits in semiconductor storage devices often suffer from uneven zener diode withstand voltage, leading to non-uniform output voltage during data erasure or writing, which can degrade storage units and result in misoperation, and low production efficiency due to disqualified goods caused by high voltage deviations.
Innovation Solution
Incorporating a voltage adjusting circuit that uses voltage modifying data to adjust the potential of a voltage setting element, such as zener diodes, to maintain precise high voltage levels, and utilizing a storage portion to store voltage modifying data for fine-tuning the high voltage provided to the memory, thereby ensuring uniformity and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a conventional high voltage regulator circuit using zener diodes is used, then high voltage can be generated for data erasure and writing, but the output voltage becomes non-uniform due to variations in zener diode withstand voltage
Solution Approach 1:
The patent changes the parameters of the voltage setting elements by selecting zener diodes with different withstand voltages to compensate for process variations. Specifically, it uses a first zener diode with a first withstand voltage and a second zener diode with a second withstand voltage, where the ratio between them is controlled to maintain uniform output voltage across different devices despite manufacturing variations.
2Productivity
If high voltage is applied to storage units for data rewriting, then data can be erased or written, but the storage units may be degraded or damaged if voltage is not precisely controlled
Solution Approach 1:
The patent implements a feedback mechanism where the output voltage of the high voltage regulator circuit is monitored and compared against a reference voltage. Based on this comparison, the circuit automatically adjusts the voltage setting elements (zener diodes) to maintain the output voltage within a precise range, preventing both under-voltage (which would fail to rewrite data) and over-voltage (which would damage storage units).
3Manufacturing precision
If zener diodes are used for voltage regulation, then high voltage can be maintained at a fixed level, but production efficiency decreases due to disqualified devices caused by voltage deviations
Solution Approach 1:
The patent systematically varies the parameters of the voltage setting elements during manufacturing to create a distribution of output voltages. By controlling the ratio between the withstand voltages of multiple zener diodes, it ensures that the majority of produced devices fall within the acceptable voltage range, thereby reducing the number of disqualified devices and improving production efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the precision of high voltage delivery to the memory, reduces the number of disqualified semiconductor storage device dies, increases yield rate, and extends the lifespan of the devices by maintaining voltage within tolerance intervals.
Implementation Method 1
the zener diode 64 turns on and a current flows through the FET 63, the zener diode 64, the FET 65 and the FET 66
Data Source
AI summary
The invention provides a semiconductor storage device which can restrain the uneven high voltage applied to the storage unit and can provide the high voltage with high precision. The semiconductor storage device includes a storage unit array, a Y decoder circuit, a X decoder circuit, a sense amplifier circuit, a Y gate circuit, a high voltage generating circuit, a high voltage regulator circuit, and a voltage adjusting circuit. The voltage modifying data for adjusting the potential of the anode of the zener diode so as to adjust the high voltage applied to the storage unit array is written into the storage unit array. The voltage modifying data is used to adjust voltage by the voltage adjusting circuit.