Semiconductor Switch Depletion Layer Temperature Monitoring
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Solution Overview
Problem
Existing methods for determining the temperature of a semiconductor switch's depletion layer, such as using thermocouples or optical methods, require accessible surfaces and have low dynamic response to temperature changes, necessitating the exploration of alternative approaches that can accurately and efficiently monitor temperature changes without these limitations.
Innovation Solution
Monitoring the first electrical voltage between a source terminal and a Kelvin source terminal during the switch-on process, where a temperature-independent trigger and a temperature-dependent trigger are identified, allowing the determination of the depletion layer's temperature based on the time interval between these triggers, potentially using a gate driver circuit as a temperature-independent reference, and considering additional voltage measurements for increased accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If thermocouples or optical methods are used to measure temperature, then spatial resolution is improved, but dynamic response to temperature changes deteriorates and surface accessibility is required
Solution Approach 1:
The patent replaces mechanical contact-based temperature measurement (thermocouples) with electrical parameter-based measurement. By monitoring the first voltage between source terminal and Kelvin source terminal during switching transitions, the method extracts temperature information from electrical characteristics rather than physical contact, achieving both high spatial resolution and fast dynamic response.
Solution Approach 2:
The patent introduces electrical voltage monitoring as an intermediary to indirectly measure temperature. Instead of directly measuring temperature with slow-response sensors, the method uses the first voltage during switching transitions as a mediator that correlates with temperature, enabling fast temperature determination through electrical parameter analysis.
2Measurement precision
If multiple voltages are monitored (first voltage and second voltage) to determine temperature, then measurement accuracy is improved, but device complexity increases
Solution Approach 1:
The patent extracts temperature determination from the complex dual-voltage method and simplifies it to use only the first voltage. By focusing exclusively on monitoring the first voltage between source terminal and Kelvin source terminal during switching transitions, the method removes the need for second voltage monitoring while maintaining temperature measurement capability, thus reducing device complexity.
Solution Approach 2:
The patent makes the first voltage monitoring serve multiple purposes: it provides both the timing information (through switching transitions) and the temperature information (through voltage magnitude analysis). This self-service approach eliminates the need for separate second voltage monitoring, simplifying the sensor technology while maintaining measurement accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies sensor technology by relying solely on the first voltage, providing a clear correlation between the depletion layer's temperature and the detected time interval, enhancing accuracy and robustness in temperature determination without the need for additional voltage considerations.
Implementation Method 1
the concentration of charge carriers in the depletion layer of a semiconductor switch changes with the temperature of the depletion layer, wherein this change also causes changes in various so-called temperature-sensitive electrical parameters (TSEP) of the semiconductor switch
Implementation Method 2
monitor a first electrical voltage between a source terminal of the semiconductor switch and a Kelvin source terminal of the semiconductor switch during a switch-on process of the semiconductor switch and to determine the temperature of the depletion layer as a function of the first voltage
Data Source
AI summary
The invention relates to a method for determining a temperature of a depletion layer of a semiconductor switch (2), wherein a first electrical voltage (VS′S) between a source terminal (S) of the semiconductor switch (2) and a Kelvin source terminal (S′) of the semiconductor switch (2) is monitored at least during a switch-on process of the semiconductor switch (2), and wherein the temperature of the depletion layer is determined in accordance with the first voltage (VS′S). According to the invention, it is monitored whether a temperature-independent first trigger is present; it is monitored whether a temperature-dependent second trigger is present, wherein, if a first voltage (VS′S) exceeding a predefined first threshold value (Vref1) is detected, it is established that the second trigger is present; a first time interval, which begins when the first trigger is detected and ends when the second trigger is detected, is determined; and the temperature of the depletion layer is determined in accordance with the first time interval.