Semiconductor Element with Integrated Temperature Detection
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Solution Overview
Problem
MOSFETs in semiconductor switches experience temperature rises due to current flow, leading to fluctuations in characteristics and potential malfunctions or breakdowns.
Innovation Solution
A semiconductor element with a temperature detecting element integrated on the substrate, allowing for the detection of temperature and control of transistors to prevent malfunctions and breakdowns, comprising a first and second transistor region with a temperature detecting element positioned between them to monitor and manage heat generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If MOSFETs are used in semiconductor switches to protect ECUs from breakdowns, then reliability is improved, but temperature rise causes characteristic fluctuations and potential malfunctions
Solution Approach 1:
The patent applies preliminary action by providing a protective film on the semiconductor substrate before forming the MOSFET structures. This protective film is formed in advance to prevent characteristic fluctuations and malfunctions caused by temperature rise during subsequent processing and operation, thereby maintaining reliability while addressing the temperature issue proactively
Solution Approach 2:
The patent uses a protective film as an intermediary layer between the semiconductor substrate and the external environment. This intermediary layer mediates the thermal stress and prevents direct exposure to temperature-related damage, reducing characteristic fluctuations while preserving the MOSFET's protective function against breakdowns
2Reliability
If discrete MOS transistors are arranged bidirectionally to prevent reverse battery connection breakdowns, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges multiple discrete MOS transistors into a single integrated semiconductor element with bidirectional conduction capability. By combining the functionality of multiple transistors into one unified structure, the patent reduces device complexity while maintaining the reliability needed to protect against reverse battery connection breakdowns
Solution Approach 2:
The patent creates a universal semiconductor switch that can conduct current in both directions and provide protection against various failure modes including reverse battery connection. This multi-functional device eliminates the need for separate protection circuits, thereby reducing overall device complexity while enhancing reliability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of a temperature detecting element enables effective management of heat-related issues, reducing the likelihood of malfunctions and breakdowns in semiconductor switches by allowing for timely intervention in the operation of the transistors.
Implementation Method 1
a temperature detecting element provided on the semiconductor substrate
Data Source
AI summary
Provided are a semiconductor element and a semiconductor device capable of reducing possibilities of malfunctions and breakdowns due to temperature rise. A semiconductor element (50) includes a first MOS transistor (Tr1), a second MOS transistor (Tr2), and a temperature detecting element (TD) that are provided on a semiconductor substrate (SB). The first MOS transistor (Tr1) includes an n-type source region (8), an n-type first semiconductor region (21) arranged away from the source region (8) and a p-type well region (31) arranged between the source region (8) and the first semiconductor region (21). The second MOS transistor (Tr2) includes an n-type source region (8) an n-type second semiconductor region (22) arranged away from the source region (8), and a p-type well region (31) arranged between the source region (8) and the second semiconductor region (22). The first semiconductor region (21) is connected to the second semiconductor region (22).