Semiconductor Temperature Sensor with Impurity Grading
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Solution Overview
Problem
Existing semiconductor devices face challenges in accurately sensing junction temperature due to the operation of parasitic bipolar junction transistors, which affects the reliability and efficiency of temperature monitoring, particularly in high-temperature applications.
Innovation Solution
A semiconductor device design that includes a temperature sensing area with a temperature sensor having a specific conductivity type impurity concentration and structure, which restricts the operation of parasitic bipolar junction transistors, allowing for accurate temperature sensing by controlling the anode-to-cathode voltage and reducing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature sensor is disposed in a semiconductor substrate, then temperature sensing function is provided, but parasitic bipolar junction transistors operate and affect measurement precision
Solution Approach 1:
The patent applies local quality by creating a temperature sensor region with different impurity concentration characteristics than the surrounding semiconductor substrate. Specifically, the sensor region has a first conductivity type impurity concentration that differs from the second conductivity type impurity concentration in the substrate, establishing localized electrical properties that prevent parasitic transistor operation while enabling accurate temperature sensing through voltage measurement across the sensor electrodes
Solution Approach 2:
The patent utilizes parameter changes by measuring the voltage between first and second electrodes in the temperature sensor region, which varies with temperature. By controlling the anode-to-cathode voltage and monitoring its temperature-dependent changes, the system achieves accurate temperature sensing without parasitic transistor interference, as the voltage parameter reflects temperature while remaining stable against parasitic effects
2Temperature
If temperature sensor operates at high temperature, then extended operational temperature range is achieved, but heat generation increases and affects sensing accuracy
Solution Approach 1:
The patent controls power consumption by regulating the anode-to-cathode voltage applied to the temperature sensor. By optimizing this voltage parameter, the sensor achieves accurate temperature measurement across an extended temperature range while minimizing heat generation and power consumption, ensuring the sensor does not significantly heat the surrounding semiconductor substrate during operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enables precise temperature sensing with reduced heat generation and extended operational temperature range, enhancing the reliability and efficiency of semiconductor devices.
Implementation Method 1
a temperature sensor, such as a Zener diode, is disposed on the insulating film
Implementation Method 2
PTL 1 discloses a silicon carbide (SiC) semiconductor device that includes a pn diode that functions as a temperature sensor
Data Source
AI summary
A semiconductor device is provided that includes a temperature sensing function that accurately senses a temperature. The semiconductor device includes a first semiconductor layer on a semiconductor substrate, and a temperature sensor. The temperature sensor includes: a sensing-body region of a second conductivity type that is disposed in the first semiconductor layer; a first region of a first conductivity type, and a second region of the first conductivity type that are arranged in the sensing-body region and are apart from each other; and a third region of the second conductivity type that is in the sensing-body region and is between the first region and the second region. A concentration of a first conductivity type impurity in the temperature-sensing conductive layer is higher than a concentration of a first conductivity type impurity in the drift region.