Semiconductor Faulty Point Detection via Thermal Resistance Measurement
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Solution Overview
Problem
Conventional electron beam absorbed current (EBAC) methods struggle to distinguish high-resistance faulty points in semiconductor circuits due to reduced signal displacement and increased electron beam irradiation causing damage and contamination, making it difficult to identify the position of faulty points, especially when they are embedded or have a high resistance value.
Innovation Solution
A method involving at least one probe in contact with a semiconductor sample, where power is supplied via the probe, and a charged particle beam is used to locally heat the faulty point, measuring the change in resistance value to detect the faulty point, which includes applying a constant voltage or current and differentiating the signal to enhance detection accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the irradiation dose of electron beam is increased to increase signal amount of EBAC, then the signal amount increases, but damage, contamination, and charged quantity due to electron beam increase in sample
Solution Approach 1:
The patent replaces the electron beam measurement system with a thermal field-based measurement system. Instead of using electron beam absorption to generate signals, the invention applies thermal fields to heat the faulty point and measures resistance changes, thereby avoiding electron beam-induced damage and contamination while achieving faulty point detection
Solution Approach 2:
The patent changes the physical parameter used for measurement from electron beam absorption (EBAC) to electrical resistance. By measuring resistance changes caused by thermal heating rather than electron beam absorption, the system achieves faulty point detection without the harmful effects of high-dose electron beam irradiation
2Ease of operation
If conventional EBAC method is used to detect faulty points, then the detection process is simple, but high-resistance faulty points cannot be distinguished from normal insulation states
Solution Approach 1:
The patent applies preliminary thermal heating to the faulty point before measurement. By pre-heating the target area with a thermal field, the faulty point's resistance changes become more pronounced, enabling distinction from normal insulation states and improving detection accuracy without complicating the overall process
Solution Approach 2:
The patent introduces temperature as an additional parameter to enhance the detectability of faulty points. By controlling and measuring resistance changes under thermal conditions, the system can distinguish high-resistance faulty points from normal insulation, maintaining operational simplicity while significantly improving measurement precision
3Measurement precision
If electron beam is used to irradiate embedded faulty points, then the faulty points can be targeted, but electron diffusion occurs inside sample making it difficult to identify position
Solution Approach 1:
The patent substitutes electron beam irradiation with thermal field application. Since thermal conduction in solids does not cause particle diffusion like electron beams, the heating method maintains spatial localization at the faulty point without electron diffusion, enabling accurate position identification
Solution Approach 2:
The patent converts the thermal conduction property of materials, which can sometimes cause heat diffusion, into a benefit by using it to create localized heating zones. The thermal field heats the faulty point and surrounding area, and by measuring resistance changes, the system can identify the faulty point position without the harmful electron diffusion effect
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the easy detection of high-resistance faulty points and those embedded in the sample by measuring changes in resistance values, reducing damage and contamination risks, and providing clear imaging of the faulty point's position.
Implementation Method 1
a sample is irradiated with a charged particle beam while power is supplied via the probe to a circuit identified by a contact of the probe, and a change in the resistance value of a faulty point heated locally is measured via the probe
Implementation Method 2
a change in the resistance value of a faulty point heated locally is measured via the probe
Data Source
AI summary
An object of the present invention relates to detecting a signal caused by a faulty point part of which the identification has been difficult with conventional EBAC. In an embodiment of the present invention, at least one probe is brought into contact with a sample on which a circuit is formed, the sample is scanned with a charged particle beam while power is supplied via the probe to the circuit identified by a contact of the probe, and a change in resistance value of a faulty point heated locally is measured via the probe. According to the present invention, even a signal caused by a high-resistance faulty point or a faulty point embedded in the sample can be easily detected.