Semiconductor Thinner Composition for Cleaner EBR and RRC Processing
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Solution Overview
Problem
Existing thinner compositions for EBR and RRC processes in semiconductor manufacturing are inadequate in achieving high efficiency and reducing manufacturing costs, particularly when using photoresists and underlayer films with short-wavelength light sources.
Innovation Solution
A thinner composition containing specific solvents, such as compounds represented by general formula (b-1) and (b-2), excluding methyl 2-methoxyisobutyrate, methyl 2-formyloxyisobutyrate, and methyl 2-acetoxyisobutyrate, is used to enhance the EBR and RRC processes, with components like methyl 3-hydroxyisobutyrate improving solubility and reducing film residue.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional thinner compositions are used for EBR and RRC processes, then photoresist and underlayer films can be removed, but the removal efficiency is insufficient and manufacturing costs increase
Solution Approach 1:
The patent changes the chemical composition parameters of the thinner by specifying exact solvent ratios (first solvent 1-50 wt%, second solvent 50-99 wt%) and excluding specific compounds (MBM, FBM, ABM). This parameter optimization achieves superior photoresist removal efficiency while controlling manufacturing costs through improved process performance.
Solution Approach 2:
The thinner composition uses a composite solvent system combining two different solvent types with complementary properties. The first solvent (e.g., propylene glycol monomethyl ether acetate) and second solvent (e.g., butyl carboxylate) work synergistically to enhance dissolution capability for both photoresist and underlayer films, improving overall process efficiency.
2Ease of manufacture
If the amount of photoresist or underlayer film is reduced to save costs, then manufacturing cost decreases, but uniform application and removal become difficult
Solution Approach 1:
The thinner is applied in advance to the substrate surface before photoresist coating in the RRC process. This preliminary treatment creates an optimized surface condition that enables uniform photoresist application even when using reduced amounts of photoresist material, thereby maintaining manufacturing precision while reducing costs.
Solution Approach 2:
By optimizing the solvent composition parameters (specific ratios and types), the thinner achieves enhanced wetting and uniform distribution properties. This allows the photoresist to be uniformly applied across the substrate surface with smaller quantities, maintaining precision while reducing material costs.
3Length of moving object
If shorter wavelength light sources are used for lithography miniaturization, then pattern dimension miniaturization is achieved, but sensitivity to contaminant sources increases
Solution Approach 1:
The thinner composition effectively extracts and removes photoresist residues, BARC, SOC, and SOG from the substrate surface before exposure. By completely removing these potential contaminant sources, the system maintains high sensitivity performance when using short-wavelength light sources for miniaturized pattern fabrication.
Solution Approach 2:
The EBR process using the optimized thinner performs preliminary cleaning of edge beads and contaminants before the main exposure process. This preliminary removal of contaminant sources ensures that short-wavelength lithography operates under clean conditions, maintaining pattern quality and reducing defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively removes photoresist and underlayer films, enhancing process efficiency, reducing costs, and improving in-plane uniformity and production yield in semiconductor device manufacturing.
Implementation Method 1
a thinner composition which contains a solvent including a compound having a specific structure... effectively removes photoresist and underlayer films
Data Source
AI summary
A thinner composition includes: (B) a solvent containing: (B1) a compound represented by the following general formula (b-1):wherein R0 is an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an acyl group having 1 to 10 carbon atoms, and R1 is a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.


