Direct Conversion Semiconductor Tile Thermal Management
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Solution Overview
Problem
Direct conversion compound semiconductor detectors in radiation imaging face challenges with thermal noise, precise positioning, and maintainability due to vertical stacking and high costs, especially in arrays of tiles where heat from integrated circuits couples with detectors and requires accurate alignment.
Innovation Solution
A tile structure with a direct conversion compound semiconductor layer, integrated circuit, and substrate layer featuring recesses for thermal management and sliding electrical contacts for precise positioning, allowing for easy assembly and maintenance, with a modular design that includes adhesive strips for low adhesion to facilitate tile replacement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If vertical stacking of tiles with direct conversion compound semiconductor layer, IC layer and substrate layer is used, then detector array functionality is achieved, but heat from IC couples to detector causing unwanted noise and thermal variation
Solution Approach 1:
A thermally conductive adhesive layer is introduced as an intermediary between the substrate layer and the assembly frame. This adhesive layer actively conducts heat away from the IC layer towards the assembly frame, transforming the harmful thermal coupling into a beneficial heat dissipation pathway. The adhesive layer serves as a thermal bridge that protects the detector from thermal noise while maintaining structural integrity.
2Area of stationary object
If tiles are arranged in arrays with increased image size, then improved resolution and larger image coverage are achieved, but positioning accuracy requirements become very stringent
Solution Approach 1:
Recesses are pre-formed in the assembly frame at predetermined locations where tiles should be positioned. These recesses act as mechanical guides that receive the protruding portions of the substrate layer, automatically aligning tiles during assembly. This preliminary structural preparation eliminates the need for complex positioning adjustments and ensures high positioning accuracy across large detector arrays.
3Reliability
If direct conversion compound semiconductors are used, then high energy radiation can be converted directly into electric charges, but costs become very high
Solution Approach 1:
The detector system is divided into multiple separate tile modules, each containing a direct conversion compound semiconductor layer. This segmentation allows the expensive compound semiconductor material to be used only where absolutely necessary for radiation detection, while other components use more economical materials. The modular tile structure also enables selective replacement and maintenance, reducing long-term costs.
4Area of stationary object
If tiles are assembled into detector arrays, then larger image coverage is achieved, but maintenance becomes difficult in case of malfunction
Solution Approach 1:
The detector array is segmented into independent tile modules that can be individually accessed, removed, and replaced. Each tile is a self-contained unit with its own compound semiconductor layer, IC layer, and substrate structure. This modular segmentation enables maintenance personnel to access and replace malfunctioning tiles without disassembling the entire detector array, significantly improving maintenance accessibility while maintaining large detector coverage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances thermal management, improves positioning accuracy, and allows for cost-effective and modular assembly of detector arrays, enabling efficient maintenance and reducing electronic noise, while maintaining high imaging performance.
Implementation Method 1
a direct conversion compound semiconductor layer configured to convert high energy radiation photons into an electric current
Implementation Method 2
a substrate layer situated next to the IC layer configured to conduct heat emitted from the IC layer
Data Source
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AI summary
According to an embodiment, a device (100) comprises: a direct conversion compound semiconductor layer (101) configured to convert high energy radiation photons into an electric current; an integrated circuit, IC, layer (102) situated next to the direct conversion compound semiconductor layer and configured to receive the electric current and process the electric current; and a substrate layer (103) situated next to the IC layer configured to conduct heat emitted from the IC layer; wherein the substrate layer comprises recesses (104) at corners of a cross section of the substrate; and wherein the substrate layer further comprises sliding electrical contacts (117) between the corners, wherein the sliding electrical contacts are connected to the IC layer through the substrate layer to receive the processed electric current. Other embodiments relate to a detector comprising an array of tiles according to the device, and an imaging system comprising: an x-ray source and the detector.